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JS28F256P30TFE 参数 Datasheet PDF下载

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型号: JS28F256P30TFE
PDF下载: 下载PDF文件 查看货源
内容描述: 256MB和512MB (256 / 256MB ) , P30-65nm [256Mb and 512Mb (256Mb/256Mb), P30-65nm]
分类和应用:
文件页数/大小: 95 页 / 1351 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
AC Write Specifications  
AC Write Specifications  
Table 46: AC Write Specifications  
Number  
W1  
Symbol  
tPHWL  
tELWL  
Parameter  
Min  
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Notes  
1, 2, 3  
1, 2, 3  
1, 2, 4  
1, 2, 12  
1, 2  
RST# high recovery to WE# low  
CE# setup to WE# low  
WE# write pulse width low  
Data setup to WE# high  
Address setup to WE# high  
CE# hold from WE# high  
Data hold from WE# high  
Address hold from WE# high  
WE# pulse width high  
VPP setup to WE# high  
VPP hold from Status read  
WP# hold from Status read  
WP# setup to WE# high  
WE# high to OE# low  
150  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
W2  
0
W3  
tWLWH  
tDVWH  
tAVWH  
tWHEH  
tWHDX  
tWHAX  
tWHWL  
tVPWH  
tQVVL  
50  
W4  
50  
W5  
50  
W6  
0
W7  
0
W8  
0
W9  
20  
1, 2, 5  
W10  
W11  
W12  
W13  
W14  
W16  
200  
1, 2, 3, 7  
0
tQVBL  
0
200  
1, 2, 3, 7  
1, 2, 9  
tBHWH  
tWHGL  
tWHQV  
0
WE# high to read valid  
tAVQV + 35  
1, 2, 3, 6,  
10  
Write to Asynchronous Read Specifications  
W18 tWHAV WE# high to Address valid  
Write to Synchronous Read Specifications  
0
-
ns  
1, 2, 3, 6, 8  
W19  
W20  
W28  
tWHCH/L  
tWHVH  
tWHVL  
WE# high to Clock valid  
WE# high to ADV# high  
WE# high to ADV# low  
19  
19  
7
-
-
-
ns  
ns  
ns  
1, 2, 3, 6,  
10  
Write Specifications with Clock Active  
W21  
W22  
tVHWL  
tCHWL  
Notes:  
ADV# high to WE# low  
Clock high to WE# low  
-
-
20  
20  
ns  
ns  
1, 2, 3, 11  
1. Write timing characteristics during erase suspend are the same as write-only operations.  
2. A write operation can be terminated with either CE# or WE#.  
3. Sampled, not 100% tested.  
4. Write pulse width low (tWLWH or tELEH) is defined from CE# or WE# low (whichever occurs  
last) to CE# or WE# high (whichever occurs first). Thus, tWLWH = tELEH = tWLEH = tELWH  
.
5. Write pulse width high (tWHWL or tEHEL) is defined from CE# or WE# high (whichever oc-  
curs first) to CE# or WE# low (whichever occurs last). Thus, tWHWL = tEHEL = tWHEL = tEHWL).  
6. tWHVH or tWHCH/L must be met when transiting from a write cycle to a synchronous burst  
read.  
7. VPP and WP# should be at a valid level until erase or program success is determined.  
8. This specification is only applicable when transiting from a write cycle to an asynchro-  
nous read. See spec W19 and W20 for synchronous read.  
9. When doing a Read Status operation following any command that alters the Status Reg-  
ister, W14 is 20 ns.  
PDF: 09005aef84566799  
p30_65nm_256Mb-512mb.pdf - Rev. A 1/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
89  
© 2013 Micron Technology, Inc. All rights reserved.