256Mb and 512Mb (256Mb/256Mb), P30-65nm
DC Voltage Characteristics
3. Sampled, not 100% tested.
4. ICCES is specified with the device deselected. If device is read while in erase suspend, cur-
rent is ICCES plus ICCR
.
5. ICCW, ICCE measured over typical or max times specified in Program and Erase Characteris-
tics (page 94) .
6. if VIN > VCC the input load current increases to 10uA max.
7. the IPPS, PPWS, PPES Will increase to 200uA when Vpp/WP# is at VPPH.
I
I
DC Voltage Characteristics
Table 42: DC Voltage Characteristics
CMOS Inputs (VCCQ = TTL Inputs (1) (VCCQ =
1.7 V – 3.6 V) 2.4 V – 3.6 V)
Min Max Min Max
-0.5 0.4 -0.5 0.6
VCCQ – 0.4 VCCQ + 0.5
Symbol Parameter
Unit Test Conditions
Notes
VIL
VIH
VOL
Input Low Voltage
V
V
2
Input High Voltage
Output Low Voltage
2
-
VCCQ + 0.5
0.2
-
0.2
V
VCC = VCCMin VCCQ
VCCQMin IOL = 100 µA
VCC = VCCMin VCCQ
VCCQMin IOH = –100 µA
=
-
-
VOH
Output High Voltage
VCCQ – 0.2
-
VCCQ – 0.2
-
V
=
VPPLK VPP Lock-Out Voltage
VLKO VCC Lock Voltage
VLKOQ VCCQ Lock Voltage
-
0.4
-
-
0.4
-
V
V
V
V
3
-
1.0
0.9
1.5
1.0
0.9
1.5
-
-
-
VPPL
VPP Voltage Supply
(Logic Level)
3.6
3.6
VPPH
Buffered Enhanced
Factory Programming
VPP
8.5
9.5
8.5
9.5
V
1. Synchronous read mode is not supported with TTL inputs.
Notes:
2. VIL can undershoot to –1.0 V for duration of 2ns or less and VIH can overshoot to VCCQ
1.0 V for durations of 2ns or less.
+
3. VPP ≤ VPPLK inhibits erase and program operations. Do not use VPPL and VPPH outside their
valid ranges.
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p30_65nm_256Mb-512mb.pdf - Rev. A 1/13 EN
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