256Mb and 512Mb (256Mb/256Mb), P30-65nm
Absolute Maximum Ratings
Absolute Maximum Ratings
Caution: Stressing the device beyond the “Absolute Maximum Ratings” may cause per-
manent damage. These are stress ratings only.
Table 39: Absolute Maximum Ratings
Parameter
Maximum Rating
–40 °C to + 85 °C
–65 °C to + 125 °C
–2.0 V to + 4.0 V
–2.0 V to + 11.5 V
–2.0 V to + 4.0 V
–2.0 V to + 5.6 V
100 mA
Notes
Temperature under bias
Storage temperature
Voltage on any signal (except VCC, VPP and VCCQ
VPP voltage
-
-
)
1
1, 2
1
VCC voltage
VCCQ voltage
1
Output short circuit current
3
1. Voltages shown are specified with respect to VSS. During infrequent non-periodic transi-
tions, the level may undershoot to –2.0 V for periods less than 20 ns or overshoot to VCC
+ 2.0 V or VCCQ + 2.0 V for periods less than 20 ns.
Notes:
2. Program/erase voltage is typically 1.7 V ~ 2.0 V. 9.0 V can be applied for 80 hours maxi-
mum total. 9.0 V program/erase voltage may reduce block cycling capability.
3. Output shorted for no more than one second. No more than one output shorted at a
time.
Operating Conditions
Caution: Operation beyond the “Operating Conditions” is not recommended and ex-
tended exposure beyond the “Operating Conditions” may affect device reliability.
Table 40: Operating Conditions
Symbol
TC
Parameter
Min
–40
Max
+85
2.0
3.6
3.6
3.6
9.5
80
-
Unit Notes
Operating Temperature
VCC Supply Voltage
I/O Supply Voltage
°C
V
1
3
VCC
1.7
VCCQ
CMOS inputs
TTL inputs
1.7
2.4
VPPL
VPPH
tPPH
VPP Voltage Supply (Logic Level)
0.9
2
Buffered Enhanced Factory Programming VPP
Maximum VPP Hours
8.5
VPP = VPPH
VPP = VPPL
VPP = VPPH
VPP = VPPH
-
Hours
Cycles
Block Erase Main and Parameter Blocks
100,000
100,000
100,000
Cycles
Main Blocks
-
Parameter Blocks
-
1. TC = Case Temperature.
Notes:
2. In typical operation VPP program voltage is VPPL
.
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p30_65nm_256Mb-512mb.pdf - Rev. A 1/13 EN
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