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PIC18F8621-I/PT 参数 Datasheet PDF下载

PIC18F8621-I/PT图片预览
型号: PIC18F8621-I/PT
PDF下载: 下载PDF文件 查看货源
内容描述: 八十〇分之六十四引脚高性能, 64 KB的增强型闪存微控制器与A / D [64/80-Pin High-Performance, 64-Kbyte Enhanced Flash Microcontrollers with A/D]
分类和应用: 闪存微控制器和处理器外围集成电路装置时钟
文件页数/大小: 396 页 / 6639 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F6525/6621/8525/8621  
Flash and SRAM devices use different control signal  
combinations to implement Byte Select mode. JEDEC  
6.2.3  
16-BIT BYTE SELECT MODE  
Figure 6-3 shows an example of 16-bit Byte Select  
mode for PIC18F8525/8621 devices. This mode allows  
table write operations to word-wide external memories  
with byte selection capability. This generally includes  
both word-wide Flash and SRAM devices.  
standard Flash memories require that a controller I/O  
port pin be connected to the memory’s BYTE/WORD  
pin to provide the select signal. They also use the BA0  
signal from the controller as a byte address. JEDEC  
standard static RAM memories, on the other hand, use  
the UB or LB signals to select the byte.  
During a TBLWTcycle, the TABLAT data is presented  
on the upper and lower byte of the AD15:AD0 bus. The  
WRH signal is strobed for each write cycle; the WRL  
pin is not used. The BA0 or UB/LB signals are used to  
select the byte to be written based on the Least  
Significant bit of the TBLPTR register.  
FIGURE 6-3:  
16-BIT BYTE SELECT MODE EXAMPLE  
PIC18F8X2X  
AD<7:0>  
A<20:1>  
373  
373  
JEDEC Word  
Flash Memory  
A<x:1>  
D<15:0>  
D<15:0>  
(2)  
138  
CE  
A0  
AD<15:8>  
(1)  
ALE  
A<19:16>  
OE  
BYTE/WORD OE WR  
WRH  
A<20:1>  
WRL  
JEDEC Word  
A<x:1>  
SRAM Memory  
BA0  
I/O  
D<15:0>  
D<15:0>  
CE  
LB  
LB  
(1)  
UB  
OE WR  
UB  
Address Bus  
Data Bus  
Control Lines  
Note 1: This signal only applies to table writes. See Section 5.1 “Table Reads and Table Writes”.  
2: Demultiplexing is only required when multiple memory devices are accessed.  
2005 Microchip Technology Inc.  
DS39612B-page 75  
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