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PIC18F4431-I/P 参数 Datasheet PDF下载

PIC18F4431-I/P图片预览
型号: PIC18F4431-I/P
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚增强型闪存微控制器采用纳瓦技术,高性能PWM和A / D [28/40/44-Pin Enhanced Flash Microcontrollers with nanoWatt Technology, High-Performance PWM and A/D]
分类和应用: 闪存微控制器
文件页数/大小: 392 页 / 3127 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC18F2331/2431/4331/4431  
6.1  
Program Memory Organization  
6.0  
MEMORY ORGANIZATION  
PIC18 microcontrollers implement a 21-bit program  
counter that can address a 2-Mbyte program memory  
space. Accessing a location between the upper bound-  
ary of the physically implemented memory and the  
2-Mbyte address will return all ‘0’s (a NOPinstruction).  
There are three memory types in enhanced MCU  
devices. These memory types are:  
• Program Memory  
• Data RAM  
• Data EEPROM  
The PIC18F2331/4331 devices each have 8 Kbytes of  
Flash memory and can store up to 4,096 single-word  
instructions.  
As Harvard architecture devices, the data and program  
memories use separate buses, enabling concurrent  
access of the two memory spaces. The data EEPROM,  
for practical purposes, can be regarded as a peripheral  
device, since it is addressed and accessed through a  
set of control registers.  
The PIC18F2431/4431 devices each have 16 Kbytes  
of Flash memory and can store up to 8,192 single-word  
instructions.  
PIC18 devices have two interrupt vectors. The Reset  
vector address is at 000000h and the interrupt vector  
addresses are at 000008h and 000018h.  
Additional detailed information on the operation of the  
Flash program memory is provided in Section 8.0  
“Flash Program Memory”. Data EEPROM is  
discussed separately in Section 7.0 “Data EEPROM  
Memory”.  
The program memory maps for PIC18F2331/4331 and  
PIC18F2431/4431 devices are shown in Figure 6-1  
and Figure 6-2, respectively.  
FIGURE 6-2:  
PROGRAM MEMORY MAP  
AND STACK FOR  
PIC18F2431/4431  
FIGURE 6-1:  
PROGRAM MEMORY MAP  
AND STACK FOR  
PIC18F2331/4331  
PC<20:0>  
21  
PC<20:0>  
21  
CALL,RCALL,RETURN  
RETFIE,RETLW  
CALL,RCALL,RETURN  
RETFIE,RETLW  
Stack Level 1  
Stack Level 1  
Stack Level 31  
Stack Level 31  
000000h  
000008h  
000018h  
Reset Vector LSb  
000000h  
Reset Vector LSb  
High-Priority Interrupt Vector LSb  
Low-Priority Interrupt Vector LSb  
000008h  
000018h  
High-Priority Interrupt Vector LSb  
Low-Priority Interrupt Vector LSb  
On-Chip Flash  
Program Memory  
On-Chip Flash  
Program Memory  
001FFFh  
002000h  
003FFFh  
004000h  
Unused  
Read ‘0’s  
Unused  
Read ‘0’s  
1FFFFFh  
1FFFFFh  
2010 Microchip Technology Inc.  
DS39616D-page 61  
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