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AT93C46DN-SH-T-989 参数 Datasheet PDF下载

AT93C46DN-SH-T-989图片预览
型号: AT93C46DN-SH-T-989
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM, 64X16, Serial, CMOS, PDSO8]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
文件页数/大小: 17 页 / 708 K
品牌: MICROCHIP [ MICROCHIP ]
 浏览型号AT93C46DN-SH-T-989的Datasheet PDF文件第5页浏览型号AT93C46DN-SH-T-989的Datasheet PDF文件第6页浏览型号AT93C46DN-SH-T-989的Datasheet PDF文件第7页浏览型号AT93C46DN-SH-T-989的Datasheet PDF文件第8页浏览型号AT93C46DN-SH-T-989的Datasheet PDF文件第10页浏览型号AT93C46DN-SH-T-989的Datasheet PDF文件第11页浏览型号AT93C46DN-SH-T-989的Datasheet PDF文件第12页浏览型号AT93C46DN-SH-T-989的Datasheet PDF文件第13页  
Erase All (ERAL): The ERAL instruction programs every bit in the memory array to the Logic 1 state and is  
primarily used for testing purposes. The DO pin outputs the Ready/Busy status of the part if CS is brought high  
after being kept low for a minimum of 250ns (tCS). The ERAL instruction is valid only at  
VCC = 5.0V 10%.  
Figure 6-5.  
ERAL Timing(1)  
tCS  
Standby  
Check  
Status  
CS  
SK  
1
0
0
1
0
DI  
tDF  
High-impedance  
tSV  
High-impedance  
DO  
Busy  
Ready  
tWP  
Note:  
1. Valid only at VCC = 4.5V to 5.5V.  
WRITE ALL (WRAL): The WRAL instruction programs all memory locations with the data patterns specified in  
the instruction. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low  
for a minimum of 250 ns (tCS). The WRAL instruction is valid only at VCC = 5.0V ±10%.  
Figure 6-6.  
WRAL Timing(1)  
tCS  
CS  
SK  
1
0
0
0
1
...  
D
...  
D0  
N
DI  
High-impedance  
DO  
Busy  
Ready  
tWP  
Note:  
1. Valid only at VCC = 4.5V to 5.5V.  
AT93C46D Automotive [DATASHEET]  
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014  
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