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AT93C46DN-SH-T-989 参数 Datasheet PDF下载

AT93C46DN-SH-T-989图片预览
型号: AT93C46DN-SH-T-989
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM, 64X16, Serial, CMOS, PDSO8]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
文件页数/大小: 17 页 / 708 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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Erase All (ERAL):
The ERAL instruction programs every bit in the memory array to the Logic 1 state and is
primarily used for testing purposes. The DO pin outputs the Ready/Busy status of the part if CS is brought high
after being kept low for a minimum of 250ns (t
CS
). The ERAL instruction is valid only at
V
CC
= 5.0V
10%.
Figure 6-5.
ERAL Timing
t
CS
Standby
CS
Check
Status
SK
DI
1
0
0
1
0
t
SV
t
DF
High-impedance
Ready
t
WP
DO
High-impedance
Busy
Note:
1.
Valid only at V
CC
= 4.5V to 5.5V.
WRITE ALL (WRAL):
The WRAL instruction programs all memory locations with the data patterns specified in
the instruction. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low
for a minimum of 250 ns (t
CS
). The WRAL instruction is valid only at V
CC
= 5.0V ±10%.
Figure 6-6.
WRAL Timing
t
CS
CS
SK
DI
1
0
0
0
1
...
DN
...
D0
DO
High-impedance
Busy
t
WP
Ready
Note:
1.
Valid only at V
CC
= 4.5V to 5.5V.
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
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