ERASE:
The Erase instruction programs all of the bits in the specified memory location to the Logic 1 state. The
self-timed erase cycle starts once the ERASE instruction and address are decoded. The DO pin outputs the
Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250ns (t
CS
). A Logic 1
at the DO pin indicates that the selected memory location has been erased, and the part is ready for another
instruction.
Figure 6-3.
ERASE Timing
t
CS
CS
Check
Status
Standby
SK
DI
1
1
1
A
N
A
N-1
A
N-2
...
A0
t
SV
t
DF
High-impedance
Ready
t
WP
DO
High-impedance
Busy
WRITE:
The WRITE instruction contains the 8 or 16 bits of data to be written into the specified memory location.
The self-timed programming cycle, t
WP
, starts after the last bit of data is received at serial data input pin DI. The
DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of
250ns (t
CS
). A Logic 0 at DO indicates that programming is still in progress. A Logic 1 indicates that the memory
location at the specified address has been written with the data pattern contained in the instruction and the part
is ready for further instructions.
A Ready/Busy status cannot be obtained if the CS is brought high after the end
of the self-timed programming cycle, t
WP
.
Figure 6-4.
Write Timing
CS
t
CS
SK
DI
1
0
1
AN
...
A0
DN
...
D0
DO
High-impedance
Busy
t
WP
Ready
8
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
MICROCHIP [ MICROCHIP TECHNOLOGY ]
