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25LC512-E/MF 参数 Datasheet PDF下载

25LC512-E/MF图片预览
型号: 25LC512-E/MF
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的SPI总线串行EEPROM [512 Kbit SPI Bus Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 32 页 / 602 K
品牌: MICROCHIP [ MICROCHIP ]
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25AA512/25LC512  
2.8  
PAGE ERASE  
The PAGE ERASE instruction will erase all bits (FFh)  
inside the given page. A Write Enable (WREN) instruc-  
tion must be given prior to attempting a PAGE ERASE.  
This is done by setting CS low and then clocking out  
the proper instruction into the 25XX512. After all eight  
bits of the instruction are transmitted, the CS must be  
brought high to set the write enable latch.  
CS must then be driven high after the last bit of the  
address or the PAGE ERASE will not execute. Once  
the CS is driven high the self-timed PAGE ERASE  
cycle is started. The WIP bit in the STATUS register  
can be read to determine when the PAGE ERASEcycle  
is complete.  
If a PAGE ERASE instruction is given to an address  
that has been protected by the Block Protect bits (BP0,  
BP1) then the sequence will be aborted and no erase  
will occur.  
The PAGE ERASEinstruction is entered by driving CS  
low, followed by the instruction code (Figure 2-8) and  
two address bytes. Any address inside the page to be  
erased is a valid address.  
FIGURE 2-8:  
PAGE ERASE SEQUENCE  
CS  
SCK  
SI  
0
1
2
3
4
5
6
7
8
9 10 11  
21 22 23  
Instruction  
16-bit Address  
15 14 13 12  
0
1
0
0
0
0
1
0
2
1
0
High-Impedance  
SO  
DS22021B-page 14  
Preliminary  
© 2007 Microchip Technology Inc.  
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