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25LC512-E/MF 参数 Datasheet PDF下载

25LC512-E/MF图片预览
型号: 25LC512-E/MF
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的SPI总线串行EEPROM [512 Kbit SPI Bus Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 32 页 / 602 K
品牌: MICROCHIP [ MICROCHIP ]
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25AA512/25LC512  
2.11 DEEP POWER-DOWN MODE  
Deep Power-Down mode of the 25XX512 is its lowest  
power consumption state. The device will not respond  
to any of the Read or Write commands while in Deep  
Power-Down mode, and therefore it can be used as an  
additional software write protection feature.  
All instructions given during Deep Power-Down mode  
are ignored except the Read Electronic Signature  
command (RDID). The RDID command will release  
the device from Deep power-down and outputs the  
electronic signature on the SO pin, and then returns  
the device to Standby mode after delay (TREL  
)
The Deep Power-Down mode is entered by driving CS  
low, followed by the instruction code (Figure 2-11) onto  
the SI line, followed by driving CS high.  
Deep Power-Down mode automatically releases at  
device power-down. Once power is restored to the  
device it will power-up in the Standby mode.  
If the CS pin is not driven high after the eighth bit of the  
instruction code has been given, the device will not  
execute Deep power-down. Once the CS line is driven  
high there is a delay (TDP) before the current settles to  
its lowest consumption.  
FIGURE 2-11:  
DEEP POWER-DOWN SEQUENCE  
CS  
0
1
2
3
4
5
6
7
SCK  
1
0
1
1
1
0
0
1
SI  
High-Impedance  
SO  
© 2007 Microchip Technology Inc.  
Preliminary  
DS22021B-page 17  
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