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25LC512-E/MF 参数 Datasheet PDF下载

25LC512-E/MF图片预览
型号: 25LC512-E/MF
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的SPI总线串行EEPROM [512 Kbit SPI Bus Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 32 页 / 602 K
品牌: MICROCHIP [ MICROCHIP ]
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25AA512/25LC512  
The Write-Protect Enable (WPEN) bit is a nonvolatile  
bit that is available as an enable bit for the WP pin. The  
Write-Protect (WP) pin and the Write-Protect Enable  
(WPEN) bit in the STATUS register control the  
programmable hardware write-protect feature. Hard-  
ware write protection is enabled when WP pin is low  
and the WPEN bit is high. Hardware write protection is  
disabled when either the WP pin is high or the WPEN  
bit is low. When the chip is hardware write-protected,  
only writes to nonvolatile bits in the STATUS register  
are disabled. See Table 2-4 for a matrix of functionality  
on the WPEN bit.  
2.5  
Write Status Register Instruction  
(WRSR)  
The Write Status Register instruction (WRSR) allows the  
user to write to the nonvolatile bits in the STATUS  
register as shown in Table 2-2. The user is able to  
select one of four levels of protection for the array by  
writing to the appropriate bits in the STATUS register.  
The array is divided up into four segments. The user  
has the ability to write-protect none, one, two or all four  
of the segments of the array. The partitioning is  
controlled as shown in Table 2-3.  
See Figure 2-7 for the WRSRtiming sequence.  
TABLE 2-3:  
ARRAY PROTECTION  
Array Addresses  
Write-Protected  
Array Addresses  
Unprotected  
BP1  
BP0  
none  
All (Sectors 0, 1, 2 & 3)  
(0000h-FFFFh)  
0
0
Upper 1/4 (Sector 3)  
(C000h-FFFFh)  
Lower 3/4 (Sectors 0, 1 & 2)  
(0000h-BFFFh)  
0
1
1
1
Upper 1/2 (Sectors 2 & 3)  
(8000h-FFFFh)  
Lower 1/2 (Sectors 0 & 1)  
(0000h-7FFFh)  
0
1
All (Sectors 0, 1, 2 & 3)  
(0000h-FFFFh)  
none  
FIGURE 2-7:  
WRITE STATUS REGISTER TIMING SEQUENCE (WRSR)  
CS  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
1
15  
0
SCK  
SI  
Instruction  
Data to STATUS Register  
7
6
5
4
3
2
0
0
0
0
0
0
0
1
High-Impedance  
SO  
DS22021B-page 12  
Preliminary  
© 2007 Microchip Technology Inc.  
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