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W3H32M64EA-400SBM 参数 Datasheet PDF下载

W3H32M64EA-400SBM图片预览
型号: W3H32M64EA-400SBM
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX64, CMOS, PBGA208, 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 27 页 / 1197 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3H32M64EA-XSBX  
ADVANCED  
BGA THERMAL RESISTANCE  
Description  
Symbol  
Theta JA  
Theta JB  
Theta JC  
Typical  
19.7  
Units  
°C/W  
°C/W  
°C/W  
Notes  
Junction to Ambient (No Airow)  
Junction to Ball  
1
1
1
20.6  
Junction to Case (Top)  
10.8  
Note: These typical thermal resistances are for each DRAM die, if using the total power of the MCP, divide the given values by 4.  
Refer to "PBGA Thermal Resistance Correlation" (Application Note) at www.whiteedc.com in the application notes section for modeling conditions.  
INPUT DC LOGIC LEVEL  
All voltages referenced to VSS  
Parameter  
Symbol  
VIH(DC)  
VIL(DC)  
Min  
VREF + 0.1 25  
-0.300  
Max  
Unit  
V
Input High (Logic 1) Voltage  
Input Low (Logic 0) Voltage  
VCC + 0.300  
VREF - 0.125  
V
INPUT AC LOGIC LEVEL  
All voltages referenced to VSS  
Parameter  
Symbol  
VIH(AC)  
VIH(AC)  
VIL(AC)  
VIL(AC)  
Min  
Max  
Unit  
V
AC Input High (Logic 1) Voltage DDR2-400 & DDR2-533  
AC Input High (Logic 1) Voltage DDR2-667  
AC Input Low (Logic 0) Voltage DDR2-400 & DDR2-533  
AC Input Low (Logic 0) Voltage DDR2-667  
VREF + 0.250  
VREF + 0.200  
V
VREF - 0.250  
VREF - 0.200  
V
V
ODT DC ELECTRICAL CHARACTERISTICS  
All voltages referenced to VSS  
Parameter  
Symbol  
RTT1(EFF)  
RTT2(EFF)  
RTT3(EFF)  
VM  
Min  
52  
Nom  
75  
Max  
97  
Unit  
Ω
Notes  
R
TT effective impedance value for 75Ω setting EMR (A6, A2) = 0, 1  
TT effective impedance value for 150Ω setting EMR (A6, A2) = 1, 0  
1
1
1
2
R
105  
35  
150  
50  
195  
65  
Ω
RTT effective impedance value for 50Ω setting EMR (A6, A2) = 1, 1  
Ω
Deviation of VM with respect to VCCQ/2  
-6  
6
%
Note: 1. RTT1(EFF) and RTT2(EFF) are determined by separately applying VIH(AC) and VIL (AC) to the ball being tested, and then measuring current, I(VIH(AC)), and I(VIL(AC)), respectively.  
RTT(EFF) = VIH(AC) - VIL(AC)  
I(VIH(AC)) - I(VIL(AC)  
)
2. Measure voltage (VM) at tested ball with no load  
VM =  
(
2 x VM - 1  
VCC  
)
x 100  
Microsemi Corporation reserves the right to change products or specications without notice.  
August 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev.1  
21  
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
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