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W3E32M64S-250BM 参数 Datasheet PDF下载

W3E32M64S-250BM图片预览
型号: W3E32M64S-250BM
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX64, 0.8ns, CMOS, PBGA219, 25 X 25 MM, PLASTIC, BGA-219]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 17 页 / 847 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3E32M64S-XBX  
White Electronic Designs  
DC Electrical Characteristics And Operating Conditions (Notes 1, 6)  
VCC = +2.5V ± 0.2V; -55°C TA +125°C  
Parameter/Condition  
Symbol  
Min  
2.3  
2.3  
-2  
Max  
2.7  
2.7  
2
Units  
V
Supply Voltage  
VCC  
VCCQ  
II  
I/O Supply Voltage  
V
Input Leakage Current: Any input 0V VIN VCC (All other pins not under test = 0V)  
Input Leakage Address Current (All other pins not under test = 0V)  
Output Leakage Current: I/Os are disabled; 0V VOUT VCC  
μA  
μA  
μA  
II  
-8  
8
IOZ  
-5  
5
Output Levels: Full drive option  
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)  
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)  
IOH  
IOL  
IOHR  
IOLR  
-16.8  
16.8  
-9  
mA  
mA  
mA  
mA  
Output Levels: Reduced drive option  
High Current (VOUT = VCCQ - 0.763V, minimum VREF, minimum VTT)  
Low Current (VOUT = 0.763V, maximum VREF, maximum VTT)  
9
I/O Reference Voltage  
I/O Termination Voltage  
VREF  
VTT  
0.49 x VCCQ  
VREF - 0.04  
0.51 x VCCQ  
VREF + 0.04  
V
V
AC INPUT OPERATING CONDITIONS  
VCC, VCCQ = +2.5V ± 0.2V; -55°C TA +125°C  
Parameter/Condition  
Input High (Logic 1) Voltage  
Input Low (Logic 0) Voltage  
Symbol  
VIH  
Min  
VREF + 0.5  
Max  
-
Units  
V
VIL  
-
VREF - 0.5  
V
ICC SPECIFICATIONS AND CONDITIONS (NOTES 1-5, 10, 12, 14)  
VCC, = +2.5V ± 0.2V; -55°C TA +125°C  
MAX  
250Mbs  
Symbol 333Mbs 266Mbs 200Mbs Units  
Parameter/Condition  
OPERATING CURRENT: One bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM, and DQS inputs  
changing once per clock cycle; Address and control inputs changing once every two clock cycles; (22, 48)  
ICC0  
520  
640  
20  
520  
640  
20  
460  
580  
20  
mA  
mA  
mA  
mA  
mA  
mA  
OPERATING CURRENT: One bank; Active-Read-Precharge; Burst = 2; tRC = tRC (MIN); tCK = tCK (MIN); IOUT = 0mA;  
Address and control inputs changing once per clock cycle (22, 48)  
ICC1  
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; Power-down mode; tCK = tCK (MIN); CKE =  
LOW; (23, 32, 50)  
ICC2P  
ICC2F  
ICC3P  
ICC3N  
IDLE STANDBY CURRENT: CS# = HIGH; All banks idle; tCK = tCK (MIN); CKE = HIGH; Address and other control  
inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM (51)  
180  
140  
200  
180  
140  
200  
160  
120  
180  
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; tCK = tCK (MIN); CKE = LOW  
(23, 32, 50)  
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One bank; Active-Precharge; tRC = tRAS (MAX); tCK = tCK  
(MIN); DQ, DM, and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per  
clock cycle (22)  
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank active; Address and control inputs changing  
once per clock cycle; tCK = tCK (MIN); IOUT = 0mA (22, 48)  
ICC4R  
ICC4W  
660  
975  
660  
800  
580  
540  
mA  
mA  
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active; Address and control inputs changing  
once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle (22)  
AUTO REFRESH CURRENT  
tREF = tRC (MIN) (27, 50)  
REF = 7.8125μs (27, 50)  
Standard (11)  
ICC5  
ICC5A  
ICC6  
1,160  
40  
1,160  
40  
1,120  
40  
mA  
mA  
mA  
mA  
t
SELF REFRESH CURRENT: CKE 0.2V  
20  
20  
20  
OPERATING CURRENT: Four bank interleaving READs (BL=4) with auto precharge, tRC =tRC (MIN); tCK = tCK (MIN);  
Address and control inputs change only during Active READ or WRITE commands. (22, 49)  
ICC7  
2,025  
1,620  
1,400  
February 2007  
Rev. 4  
11  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
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