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W3E32M64S-250BM 参数 Datasheet PDF下载

W3E32M64S-250BM图片预览
型号: W3E32M64S-250BM
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX64, 0.8ns, CMOS, PBGA219, 25 X 25 MM, PLASTIC, BGA-219]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 17 页 / 847 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3E32M64S-XBX  
White Electronic Designs  
50. ICC2N species the DQ, DQS, and DM to be driven to a valid high or low logic level.  
ICC2Q is similar to ICC2F except ICC2Q species the address and control inputs to  
remain stable. Although ICC2F, ICC2N, and ICC2Q are similar, ICC2F is “worst case.”  
51. Whenever the operating frequency is altered, not including jitter, the DLL is required  
to be reset. This is followed by 200 clock cycles before any READ command.  
52. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20  
MHz. Any noise above 20 MHz at the DRAM generated from any source other than  
that of the DRAM itself may not exceed the DC voltage range of 2.6V ± 100mV.  
February 2007  
Rev. 4  
15  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
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