欢迎访问ic37.com |
会员登录 免费注册
发布采购

W3E32M64S-250BM 参数 Datasheet PDF下载

W3E32M64S-250BM图片预览
型号: W3E32M64S-250BM
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX64, 0.8ns, CMOS, PBGA219, 25 X 25 MM, PLASTIC, BGA-219]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 17 页 / 847 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
 浏览型号W3E32M64S-250BM的Datasheet PDF文件第3页浏览型号W3E32M64S-250BM的Datasheet PDF文件第4页浏览型号W3E32M64S-250BM的Datasheet PDF文件第5页浏览型号W3E32M64S-250BM的Datasheet PDF文件第6页浏览型号W3E32M64S-250BM的Datasheet PDF文件第8页浏览型号W3E32M64S-250BM的Datasheet PDF文件第9页浏览型号W3E32M64S-250BM的Datasheet PDF文件第10页浏览型号W3E32M64S-250BM的Datasheet PDF文件第11页  
W3E32M64S-XBX  
White Electronic Designs  
FIGURE 3 – MODE REGISTER DEFINITION  
TABLE 1 – BURST DEFINITION  
Order of Accesses Within a Burst  
Burst  
Length  
Starting Column  
Address  
Type = Sequential Type = Interleaved  
A
10  
A
9
A8  
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
BA  
1
BA  
0
A12  
A
11  
Address Bus  
A0  
0
1
A0  
0
1
0
1
A0  
0
1
2
4
0-1  
1-0  
0-1  
1-0  
Mode Register (Mx)  
0*  
0*  
Operating Mode  
CAS Latency BT  
Burst Length  
A1  
0
0
1
1
A1  
0
0
1
1
*
M14 and M13  
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
(BA0 and BA1 must be  
"0, 0" to select  
the base mode register  
(vs. the extended  
mode register).  
Burst Length  
M2 M1 M0  
M3 = 0  
M3 = 1  
Reserved  
2
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved  
2
A2  
0
0
0
0
4
4
8
8
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
0
1
8
1
1
1
1
0
0
1
1
0
1
0
1
Burst Type  
M3  
0
1
Sequential  
Interleaved  
CAS Latency  
M6 M5 M4  
NOTES:  
Reserved  
Reserved  
2
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1. For a burst length of two, A1-Ai select two-data-element block; A0 selects the  
starting column within the block.  
2. For a burst length of four, A2-Ai select four-data-element block; A0-1 select the  
starting column within the block.  
3. For a burst length of eight, A3-Ai select eight-data-element block; A0-2 select the  
starting column within the block.  
Reserved  
Reserved  
Reserved  
2.5  
Reserved  
4. Whenever a boundary of the block is reached within a given sequence above, the  
following access wraps within the block.  
M11  
0
M10  
0
M9  
0
M8  
0
M7  
0
M6-M0  
Valid  
Operating Mode  
M12  
0
Normal Operation  
0
0
0
1
0
0
Valid  
Normal Operation/Reset DLL  
-
-
-
-
-
-
All other states reserved  
-
WRITE  
DQM signal is registered LOW, the corresponding data  
will be written to memory; if the DQM signal is registered  
HIGH, the corresponding data inputs will be ignored, and a  
WRITE will not be executed to that byte/column location.  
The WRITE command is used to initiate a burst write  
access to an active row. The value on the BA0, BA1 inputs  
selects the bank, and the address provided on inputsA0-9  
selects the starting column location. The value on inputA10  
determines whether or notAUTO PRECHARGE is used. If  
AUTO PRECHARGE is selected, the row being accessed  
will be precharged at the end of the WRITE burst; ifAUTO  
PRECHARGE is not selected, the row will remain open for  
subsequent accesses. Input data appearing on the D/Qs  
is written to the memory array subject to the DQM input  
logic level appearing coincident with the data. If a given  
PRECHARGE  
The PRECHARGE command is used to deactivate the  
open row in a particular bank or the open row in all banks.  
The bank(s) will be available for a subsequent row access  
a specied time (tRP) after the PRECHARGE command is  
issued. Except in the case of concurrent auto precharge,  
where a READ or WRITE command to a different bank is  
February 2007  
Rev. 4  
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com