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MX26L3220XBI-12 参数 Datasheet PDF下载

MX26L3220XBI-12图片预览
型号: MX26L3220XBI-12
PDF下载: 下载PDF文件 查看货源
内容描述: 32M - BIT [2M ×16 ]的CMOS多重一次性可编程EPROM [32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM]
分类和应用: 闪存存储内存集成电路可编程只读存储器电动程控只读存储器
文件页数/大小: 38 页 / 1135 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX26L3220  
ID READ mode, and the system may read at any address  
any number of times, without init iating another command  
sequence. A read cycle at address XX00h retrieves the  
manufacturer code. A read cycle at address XX01h re-  
turns the device code.  
READING ARRAY DATA  
The device is automatically set to reading array data  
after device power-up. No commands are required to  
retrieve data.The device is also ready to read array data  
after completing an Automatic Program or Automatic  
Erase algorithm.  
The system must write the reset command to exit the  
autoselect mode and return to reading array data.  
The system must issue the reset command to re-en-  
able the device for reading array data if Q5 goes high, or  
while in the autoselect mode. See the "Reset Command"  
section, next.  
WORD PROGRAM COMMAND SEQUENCE  
The command sequence requires four bus cycles, and  
is initiated by writing two unlock write cycles, followed  
by the program set-up command. The program address  
and data are written next, which in turn initiate the  
Embedded Program algorithm.The system is not required  
to provide further controls or timings. The device  
automatically generates the program pulses and verifies  
the programmed cell margin. Table 4 shows the address  
and data requirements for the byte program command  
sequence.  
RESET COMMAND  
Writing the reset command to the device resets the  
device to reading array data. Address bits are don't care  
for this command.  
The reset command may be written between the se-  
quence cycles in an erase command sequence before  
erasing begins. This resets the device to reading array  
data. Once erasure begins, however, the device ignores  
reset commands until the operation is complete.  
When the Embedded Program algorithm is complete, the  
device then returns to reading array data and addresses  
are no longer latched. The system can determine the  
status of the program operation by using Q7, Q6. See  
"Write Operation Status" for information on these status  
bits.  
The reset command may be written between the se-  
quence cycles in a program command sequence before  
programming begins. This resets the device to reading  
array data.Once programming begins,however, the device  
ignores reset commands until the operation is complete.  
Any commands written to the device during the Em-  
bedded Program Algorithm are ignored. Note that a  
hardware reset immediately terminates the programming  
operation.The Word Program command sequence should  
be reinitiated once the device has reset to reading array  
data, to ensure data integrity.  
The reset command may be written between the se-  
quence cycles in an SILICON ID READ command  
sequence. Once in the SILICON ID READ mode, the  
reset command must be written to return to reading array  
data.  
Programming is allowed in any sequence. A bit cannot  
be programmed from a "0" back to a "1". Cause the Data  
Polling algorithm to indicate the operation was successful.  
However, a succeeding read will show that the data is  
still "0". Only erase operations can convert a "0" to a  
"1".  
If Q5 goes high during a program or erase operation,  
writing the reset command returns the device to reading  
array data.  
SILICON ID READ COMMAND SEQUENCE  
The SILICON ID READ command sequence allows the  
host system to access the manufacturer and devices  
codes, and determine whether or not. Table 4 shows the  
address and data requirements. This method is an  
alternative to that shown in Table 1, which is intended for  
EPROM programmers and requires VID on address bit  
A9.  
ACCELERATED PROGRAM OPERATIONS  
The device offers accelerated program operations through  
the ACC pin. When the system asserts VHH on the ACC  
pin, the device automatically bypass the two "Unlock"  
write cycle. The device uses the higher voltage on the  
ACC pin to accelerate the operation. Note that the ACC  
pin must not be atVHH any operation other than accelerated  
programming, or device damage may result.  
The SILICON ID READ command sequence is initiated  
by writing two unlock cycles, followed by the SILICON  
ID READ command.The device then enters the SILICON  
P/N:PM0826  
REV. 0.5, JAN. 29, 2002  
11  
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