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MX26L3220XBI-12 参数 Datasheet PDF下载

MX26L3220XBI-12图片预览
型号: MX26L3220XBI-12
PDF下载: 下载PDF文件 查看货源
内容描述: 32M - BIT [2M ×16 ]的CMOS多重一次性可编程EPROM [32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM]
分类和应用: 闪存存储内存集成电路可编程只读存储器电动程控只读存储器
文件页数/大小: 38 页 / 1135 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX26L3220  
REQUIREMENTS FOR READING ARRAY  
DATA  
STANDBY MODE  
MX26L3220 can be set into Standby mode with two dif-  
ferent approaches. One is using both CE and RESET  
pins and the other one is using RESET pin only.  
To read array data from the outputs, the system must  
drive the CE and OE pins toVIL.CE is the power control  
and selects the device. OE is the output control and gates  
array data to the output pins.WE should remain at VIH.  
When using both pins of CE and RESET, a CMOS  
Standby mode is achieved with both pins held at Vcc ±  
0.3V. Under this condition, the current consumed is less  
than 50uA (typ.). If both of the CE and RESET are held  
atVIH, but not within the range ofVCC ± 0.3V, the device  
will still be in the standby mode, but the standby currect  
will be larger. During Auto Algorithm operation, Vcc ac-  
tive current (Icc2) is required even CE = "H" until the  
operation is complated.The device can be read with stan-  
dard access time (tCE) from either of these standby  
modes.  
The internal state machine is set for reading array data  
upon device power-up, or after a hardware reset. This  
ensures that no spurious alteration of the memory contect  
occurs during the power transition. No command is  
necessary in this mode to obtain array data. Standard  
microprocessor read cycles that assert valid address on  
the device address inputs produce valid data on the device  
data outputs.The device remains enabled for read access  
until the command register contents are altered.  
When using only RESET, a CMOS standby mode is  
achieved with RESET input held at Vss ±0.3V, Under  
this condition the current is consumed less than 50uA  
(typ.). Once the RESET pin is taken high,the device is  
back to active without recovery delay.  
WRITE COMMANDS/COMMAND  
SEQUENCES  
To program data to the device the system must drive  
WE and CE to VIL, and OE to VIH.  
In the standby mode the outputs are in the high imped-  
ance state, independent of the OE input.  
An erase operation can erase the entire device. The  
"Writing specific address and data commands or  
sequences into the command register initiates device  
operations. Table 1 defines the valid register command  
sequences.Writing incorrect address and data values or  
writing them in the improper sequence resets the device  
to reading array data."section has details on erasing the  
entire chip.  
MX26L3220 is capable to provide the Automatic Standby  
Mode to restrain power consumption during read-out of  
data.This mode can be used effectively with an applica-  
tion requested low power consumption such as handy  
terminals.  
To active this mode, MX26L3220 automatically switch  
themselves to low power mode when MX26L3220 ad-  
dresses remain stable during access time of tACC+30ns.  
It is not necessary to control CE, WE, and OE on the  
mode. Under the mode, the current consumed is typi-  
cally 50uA (CMOS level).  
After the system writes the autoselect command  
sequence, the device enters the autoselect mode. The  
system can then read autoselect codes from the internal  
reqister (which is separate from the memory array) on  
Q15-Q0. Standard read cycle timings apply in this mode.  
Refer to the Autoselect Mode and Autoselect Command  
Sequence section for more information.  
OUTPUT DISABLE  
ICC2 in the DC Characteristics table represents the active  
current specification for the write mode. The "AC  
Characteristics" section contains timing specification  
table and timing diagrams for write operations.  
With the OE input at a logic high level (VIH), output from  
the devices are disabled.This will cause the output pins  
to be in a high impedance state.  
P/N:PM0826  
REV. 0.5, JAN. 29, 2002  
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