5 V/1 2 V/1 5 V o r Ad ju s t a b le , High-Effic ie nc y,
Low I , Ste p-Up DC-DC Controlle rs
Q
0–MAX73
V
IN
= 5V
L1
150µH
C2
0.1µF
C1
47µF
C2
0.1µF
3
D1
1N5818
V
IN
V
= 24V
OUT
V+
@ 30mA
1
14
2
V12
V15
3
910Ω
V+
13
12
11
EXTH
EXTL
CS
ZTX694B
10
4
C1
V5
SGND
LBO
L1
22µH
10
4
R4
63.4k
(1%)
SGND
8
C4
150µF
REF
100k
MAX773
LBO
V
= 12V
D1
1N5817
OUT
C3
0.1µF
8
REF
MAX773
5
Si9410DY
LBI
C3
0.1µF
13
EXTH
EXTL
CS
N
R
SENSE
0.4Ω
14
1
V15
V12
V5
5
12
11
LBI
R3
10k
(1%)
7
6
SHDN
FB
C4
2
7
SHDN
6
R
SENSE
FB
GND
9
R2
510k
R1
34k
GND
9
V
TRIP
(V)
R2 = (R1) (V -1)
OUT
V
TRIP
MIN NOMINAL MAX
10.6 11.0 11.4
R4 = R3
-1
V
REF
(
)
V
REF
V
REF
= 1.5V
VREF = 1.5V
Figure 3a. 12V Preset Output, Bootstrapped, N-Channel
Power MOSFET
Figure 3b. 24V Output, Non-Bootstrapped, NPN Power
Transistor
V
IN
V
IN
= 5V
C1
C1
L1
20µH
C2
0.1µF
L1
22µH
V
OUT
= 16V
D1
C2
0.1µF
1N5817
3
V
= 15V
D1
1N5817
OUT
3
V+
10
4
SGND
LBO
13
12
V+
EXTH
EXTL
CS
N
13
N
EXTH
EXTL
CS
Si9410DY
4
8
Si9410DY
LBO
REF
C4
12
11
11
8
REF
C3
0.1µF
C4
MAX773
R
SENSE
R
SENSE
C3
0.1µF
MAX773
5
14
1
LBI
V15
V12
V5
7
14
1
V15
V12
SHDN
6
5
7
FB
SHDN
SGND
2
R2
133k
2
LBI
V5
6
10
FB
GND
9
GND
9
R1
13.7k
R2 = (R1) (V -1)
OUT
V
REF
V
REF
= 1.5V
Figure 3c. 15V Preset Output, Non-Bootstrapped N-Channel
Power MOSFET
Figure 3d. 16V Output, Bootstrapped, N-Channel
Power MOSFET
______________________________________________________________________________________
11
MAXIM [ MAXIM INTEGRATED PRODUCTS ]
