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GM72V66841CT 参数 Datasheet PDF下载

GM72V66841CT图片预览
型号: GM72V66841CT
PDF下载: 下载PDF文件 查看货源
内容描述: 2,097,152字×8位×4银行同步动态RAM [2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 57 页 / 591 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon  
GM72V66841CT/CLT  
Write Command to Precharge Command  
However, if the burst write operation is  
unfinished, the input data must be masked by  
means of DQM, DQMU/DQML for assurance of  
Interval (same bank): When the Precharge  
command is executed for the same bank as the  
write command that preceded it, the minimum  
interval between the two commands is 1 cycle.  
the cycle defined by tRWL.  
Burst Length = 4 ( To stop write operation)  
CLK  
PRE/PALL  
WRIT  
Command  
DQM,  
DQMU/DQML  
Din  
tRWL  
CLK  
PRE/PALL  
WRIT  
in A0  
Command  
DQM,  
DQMU/DQML  
Din  
in A1  
tRWL  
Burst Length = 4 (To write all data)  
CLK  
PRE/PALL  
WRIT  
in A0  
Command  
DQM,  
DQMU/DQML  
Din  
in A1  
in A2  
in A3  
tRWL  
32  
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