Specifications ispLSI 2032/A
Switching Test Conditions
Figure 2. Test Load
Input Pulse Levels
GND to 3.0V
-135, -150, -180 ≤ 1.5 ns
-80, -110 ≤ 3 ns
+ 5V
Input Rise and Fall Time
10% to 90%
R
1
2
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
1.5V
1.5V
Device
Output
Test
Point
See Figure 2
Table 2-0003/2032
R
C
*
L
3-state levels are measured 0.5V from
steady-state active level.
Output Load Conditions (see Figure 2)
*
C includes Test Fixture and Probe Capacitance.
L
0213A
TEST CONDITION
R1
470Ω
∞
R2
CL
A
B
390Ω
390Ω
390Ω
35pF
35pF
35pF
Active High
Active Low
470Ω
Active High to Z
∞
390Ω
390Ω
5pF
at VOH-0.5V
C
Active Low to Z
at VOL+0.5V
470Ω
5pF
Table 2 - 0004A
DC Electrical Characteristics
Over Recommended Operating Conditions
3
SYMBOL
PARAMETER
Output Low Voltage
Output High Voltage
CONDITION
IOL= 8 mA
MIN.
–
TYP. MAX. UNITS
–
–
0.4
–
V
VOL
VOH
IIL
IOH = -4 mA
2.4
–
V
Input or I/O Low Leakage Current 0V ≤ V ≤ V (Max.)
–
-10
10
µA
µA
µA
µA
mA
mA
mA
mA
IN
IL
Input or I/O High Leakage Current 3.5V ≤ V ≤ V
–
–
IIH
IN
CC
ispEN Input Low Leakage Current 0V ≤ V ≤ V
–
–
-150
-150
-200
–
IIL-isp
IIL-PU
IOS1
IN
IL
I/O Active Pull-Up Current
Output Short Circuit Current
0V ≤ V ≤ V
–
–
IN
IL
V = 5V, VOUT = 0.5V
–
–
CC
-180, -150
Others
–
60
40
40
ICC2, 4
IL
IH
Comm.
V = 0.0V, V = 3.0V
Operating Power Supply Current
–
–
fTOGGLE = 1 MHz
–
–
Industrial
Table 2-0007/2032
1. One output at a time for a maximum duration of one second. VOUT = 0.5V was selected to avoid test problems
by tester ground degradation. Characterized but not 100% tested.
2. Measured using two 16-bit counters.
3. Typical values are at VCC= 5V and T = 25°C.
A
4. Maximum ICC varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum ICC
.
4
LATTICE [ LATTICE SEMICONDUCTOR ]
