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AN10E40 参数 Datasheet PDF下载

AN10E40图片预览
型号: AN10E40
PDF下载: 下载PDF文件 查看货源
内容描述: [现场可编程模拟器件]
分类和应用:
文件页数/大小: 37 页 / 292 K
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12  
DATA DATA  
[7:4]  
XXXX  
XXXX  
[3:0]  
0000  
0001  
Micro Mode Function Register Behavior  
Normal Operation – No function performed.  
Reset Device – Entire device configuration memory is reset. BUSY is asserted until the reset  
sequence is complete.  
XXXX  
0010  
Load Configuration – After writing this command, a complete configuration image should be  
presented to the data register in 8 bit segments, starting with the configuration header block. At  
any time during the loading process, a read from the data register will return status register  
contents. As complete rows including Error Check Bytes (ECB) are loaded, BUSY is temporarily  
asserted while row data is transferred from the internal data shift register to the currently  
addressed SRAM memory row. Once this write operation is complete, BUSY is deasserted and  
additional data can be written. Each time BUSY is deasserted, the status register should be  
checked for incorrect ID or row configuration data errors. Once an error is detected, NO further  
write accesses to the data shift register will be accepted until the device is reset, or another load  
configuration command is issued.  
XXXX  
XXXX  
0011  
0100  
Reset Row – Indicates that the next data written to the data register will be a device row  
address. After the address is written, the contents of that configuration memory row are reset.  
BUSY is asserted after the address is written and deasserted when the operation is complete.  
Load Row – Indicates that the next data written to the data register will be a device row address  
followed by configuration date for that row including the terminating ECB. After the ECB is  
written, BUSY will be asserted during the internal write and deasserted when the write  
completes. Reading the data register returns status register contents. The status register should  
be checked for row configuration data errors. Once an error has been detected, NO further write  
accesses to the data register will be accepted until the device is reset or a load configuration  
command is issued.  
XXXX  
XXXX  
0101  
0110  
Read Row – The next data written to the data register will be interpreted as a row address. After  
the row address is written, BUSY is asserted while row data is copied into the data shift register.  
BUSY is deasserted when the transfer is complete. Subsequent successive reads from the data  
register will return row configuration data. No ECB is returned. The row data read back is the  
same order as it was written, rightmost byte first.  
Read Device ID – 4 subsequent reads form the data register will return the device ID. The most  
significant ID byte is read first. The value of the device ID is 13 85 02 B7.  
(Factory Reserved)  
-
-
0111  
1XXX  
XXXX  
XXXX  
(Factory Reserved)  
1XXX  
X1XX  
(Factory Reserved)  
Internal Oscillator Disable – Normally always enabled. If internal configuration clock is  
selected, oscillator can not be disabled. Writing a 0 re-enables the oscillator.  
(Factory Reserved)  
XX1X  
XXX1  
XXXX  
XXXX  
Analog Enable – Powers up Analog IO Cells and CAB Op-Amps.  
Figure 14. Micro Mode Function Register Behavior  
DATA  
Micro Mode Status Register Contents  
[7:0]  
(Data[7:3] are factory reserved. Their function may change without notice.)  
Incorrect Device ID detected in configuration data stream.  
Row configuration data error (ECB mismatch).  
XXXXXXX1  
XXXXXX1X  
XXXXX1XX  
XXXX1XXX  
XXX1XXXX  
XX1XXXXX  
X1XXXXXX  
1XXXXXXX  
Busy signal asserted. Allows software handshaking if hardware wait states are not to be used.  
Asserted while last internal configuration SRAM row is being written.  
Test_Count_0  
End_Test  
Last_Byte, asserted when last configuration byte is being written.  
ID_Full, asserted when the ID has been written to the device.  
Figure 15. Micro Mode Status Register Contents  
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