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IC43R16320B-6TL 参数 Datasheet PDF下载

IC43R16320B-6TL图片预览
型号: IC43R16320B-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 48 页 / 839 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS43R16320B  
IC43R16320B  
DC Characteristics 1 (T A = 0°C to +70°C, VDD, VDDQ = 2.6V 0.1V, VSS, VSSQ = 0V) [DDR400]  
Parameter  
Symbol  
Grade  
× 16  
120  
Unit  
mA  
Test condition  
Notes  
1, 2, 9  
Operating current  
(ACT-PRE)  
CKE VIH,  
tRC = tRC (min.)  
IDD0  
CKE VIH, BL = 4,  
CL = 3,  
tRC = tRC (min.)  
Operating current  
(ACT-READ-PRE)  
IDD1  
160  
mA  
1, 2, 5  
Idle power down standby  
current  
IDD2P  
5
30  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
CKE VIL ≥  
4
CKE VIH, /CS VIH  
DQ, DQS, DM = VREF  
Floating idle standby current IDD2F  
4, 5  
CKE VIH, /CS VIH  
DQ, DQS, DM = VREF  
Quiet idle standby current  
IDD2Q  
IDD3P  
IDD3N  
IDD4R  
IDD4W  
IDD5  
25  
4, 10  
3
Active power down standby  
current  
30  
CKE VIL≥  
CKE VIH, /CS VIH  
tRAS = tRAS (max.)  
Active standby current  
60  
3, 5, 6  
1, 2, 5, 6  
1, 2, 5, 6  
Operating current  
(Burst read operation)  
CKE VIH, BL = 2,  
CL = 3  
215  
215  
220  
5
Operating current  
(Burst write operation)  
CKEVIH, BL = 2,  
CL = 3  
tRFC = tRFC (min.),  
Input VILor VIH  
Input VDD – 0.2 V  
Auto-refresh current  
Self-refresh current  
IDD6  
Input 0.2 V  
Operating current  
(4 banks interleaving)  
IDD7A  
400  
BL = 4  
1, 5, 6, 7  
DC Characteristics 1 (T A = 0°C to +70°C, VDD, VDDQ = 2.5V 0.2V, VSS, VSSQ = 0V) [DDR333, 266]  
Parameter  
Symbol  
Grade  
× 16  
Unit  
mA  
Test condition  
Notes  
1, 2, 9  
Operating current  
(ACT-PRE)  
-6  
-7  
105  
95  
CKE VIH,  
tRC = tRC (min.)  
IDD0  
CKE VIH, BL = 4,  
CL = 2.5,  
tRC = tRC (min.)  
Operating current  
(ACT-READ-PRE)  
-6  
-7  
140  
130  
IDD1  
mA  
1, 2, 5  
Idle power down standby  
current  
IDD2P  
5
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
CKE VIL  
4
-6  
-7  
30  
25  
CKE VIH, /CS VIH,  
DQ, DQS, DM = VREF  
Floating idle standby current IDD2F  
4, 5  
CKE VIH, /CS VIH,  
DQ, DQS, DM = VREF  
Quiet idle standby current  
IDD2Q  
IDD3P  
IDD3N  
IDD4R  
IDD4W  
IDD5  
20  
30  
55  
4, 10  
3
Active power down standby  
current  
CKE VIL  
-6  
-7  
CKE VIH, /CS VIH  
tRAS = tRAS (max.)  
Active standby current  
3, 5, 6  
1, 2, 5, 6  
1, 2, 5, 6  
Operating current  
(Burst read operation)  
-6  
-7  
185  
155  
CKE VIH, BL = 2,  
CL = 2.5  
Operating current  
(Burst write operation)  
-6  
-7  
185  
160  
CKE VIH, BL = 2,  
CL = 2.5  
-6  
-7  
205  
195  
tRFC = tRFC (min.),  
Auto-refresh current  
Self-refresh current  
Input VIL or VIH  
Input VDD – 0.2 V  
IDD6  
5
Input 0.2 V  
Operating current  
(4 banks interleaving)  
-6  
-7  
380  
345  
IDD7A  
BL = 4  
1, 5, 6, 7  
Integrated Silicon Solution, Inc. — www.issi.com  
7
Rev. 00B  
06/11/08  
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