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IC43R16320B-6TL 参数 Datasheet PDF下载

IC43R16320B-6TL图片预览
型号: IC43R16320B-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 48 页 / 839 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS43R16320B  
IC43R16320B  
Command Intervals  
A Read command to the consecutive Read command Interval  
Destination row of the  
consecutive read command  
Bank  
address  
Row address State  
Operation  
The consecutive read can be performed after an interval of no less than 1 cycle to  
interrupt the preceding read operation.  
1. Same  
Same  
Different  
Any  
ACTIVE  
Precharge the bank to interrupt the preceding read operation. tRP after the  
precharge command, issue the ACT command. tRCD after the ACT command, the  
consecutive read command can be issued. See ‘A read command to the  
consecutive precharge interval’ section.  
2. Same  
The consecutive read can be performed after an interval of no less than 1 cycle to  
interrupt the preceding read operation.  
3. Different  
ACTIVE  
IDLE  
Precharge the bank without interrupting the preceding read operation. tRP after  
the precharge command, issue the ACT command. tRCD after the ACT command,  
the consecutive read command can be issued.  
t0  
t4  
t5  
t6  
t7  
t8  
t9  
t10  
t11  
CK  
/CK  
Command  
NOP  
ACT  
Row  
NOP  
READ  
READ  
Column A Column B  
Address  
BA  
out out out out out out  
A0 A1 B0 B1 B2 B3  
DQ  
Column = A Column = B  
Read Read  
Column = A  
Dout  
Column = B  
Dout  
DQS  
CL = 3  
BL = 4  
Bank0  
Bank0  
Active  
READ to READ Command Interval (same ROW address in the same bank)  
Integrated Silicon Solution, Inc. — www.issi.com  
29  
Rev. 00B  
06/11/08  
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