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IC43R16320B-6TL 参数 Datasheet PDF下载

IC43R16320B-6TL图片预览
型号: IC43R16320B-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 48 页 / 839 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS43R16320B  
IC43R16320B  
A Write command to the consecutive Write command Interval  
Destination row of the consecutive write  
command  
Bank  
address  
Row address State  
Operation  
The consecutive write can be performed after an interval of no less than 1 cycle to  
interrupt the preceding write operation.  
1. Same  
Same  
Different  
Any  
ACTIVE  
Precharge the bank to interrupt the preceding write operation. tRP after the  
precharge command, issue the ACT command. tRCD after the ACT command, the  
consecutive write command can be issued. See ‘A write command to the  
consecutive precharge interval’ section.  
2. Same  
The consecutive write can be performed after an interval of no less than 1 cycle to  
interrupt the preceding write operation.  
3. Different  
ACTIVE  
IDLE  
Precharge the bank without interrupting the preceding write operation. tRP after  
the precharge command, issue the ACT command. tRCD after the ACT command,  
the consecutive write command can be issued.  
t0  
tn  
tn+1  
tn+2  
tn+3  
tn+4  
tn+5  
tn+6  
CK  
/CK  
Command  
NOP  
ACT  
Row  
NOP  
WRIT  
WRIT  
Column A Column B  
Address  
BA  
DQ  
inA0 inA1 inB0 inB1 inB2 inB3  
Column = A  
Write  
Column = B  
Write  
DQS  
Bank0  
Active  
BL = 4  
Bank0  
WRITE to WRITE Command Interval (same ROW address in the same bank)  
Integrated Silicon Solution, Inc. — www.issi.com  
31  
Rev. 00B  
06/11/08  
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