IC41C1665
IC41LV1665
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND
5V
3.3V
5V
–1.0 to +7.0
–0.5 to +4.6
–1.0 to +7.0
–0.5 to +4.6
50
V
V
VCC
Supply Voltage
V
3.3V
V
IOUT
PD
Output Current
mA
W
oC
oC
oC
Power DICSIpation
Operation Temperature
1
TA
Com.
Ind.
0 to +70
-40 to +85
–55 to +125
TSTG
Storage Temperature
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
5V
3.3V
5V
4.5
3.0
2.4
2.0
–1.0
–0.3
0
5.0
3.3
—
—
—
—
—
—
5.5
V
3.6
V
VIH
VIL
TA
Input High Voltage
Input Low Voltage
Ambient Temperature
VCC + 1.0
VCC + 0.3
0.8
V
3.3V
5V
V
V
3.3V
Com.
Ind.
0.8
V
70
oC
oC
–40
85
CAPACITANCE(1,2)
Symbol
Parameter
Max.
Unit
CIN1
CIN2
CIO
Input Capacitance: A0-A7
5
7
7
pF
pF
pF
Input Capacitance: RAS, UCAS, LCAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O15
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25oC, f = 1 MHz, VCC = 5.0V + 10%, or VCC = 3.3V + 10%.
6
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
