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IC41LV1665-40T 参数 Datasheet PDF下载

IC41LV1665-40T图片预览
型号: IC41LV1665-40T
PDF下载: 下载PDF文件 查看货源
内容描述: [Fast Page DRAM, 64KX16, 40ns, CMOS, PDSO40, 0.400 INCH, TSOP2-40]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 19 页 / 232 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IC41C1665  
IC41LV1665  
AC CHARACTERISTICS(1,2,3,4,5,6)  
(Recommended Operating Conditions unless otherwise noted.)  
-25  
-30  
-35  
-40  
Symbol  
Parameter  
Min. Max.  
Min. Max.  
Min. Max.  
Min. Max. Units  
tRC  
Random READ or WRITE Cycle Time  
43  
25  
15  
4
25  
8
55  
30  
20  
9
30  
65  
35  
23  
10  
6
35  
10  
18  
10K  
10K  
25  
75  
40  
25  
11  
7
40  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
(6, 7)  
tRAC  
tCAC  
tAA  
Access Time from RAS  
(6, 8, 15)  
Access Time from CAS  
9
11  
Access Time from Column-Address(6)  
RAS Pulse Width  
12  
10k  
10k  
17  
16  
20  
tRAS  
tRP  
10K  
10K  
21  
10K  
10K  
29  
RAS Precharge Time  
tCAS  
tCP  
CAS Pulse Width(26)  
CAS Precharge Time(9, 25)  
CAS Hold Time (21)  
4
5
tCSH  
tRCD  
tASR  
tRAH  
tASC  
tCAH  
tAR  
21  
10  
0
30  
10  
0
35  
10  
0
40  
10  
0
RAS to CAS Delay Time(10, 20)  
Row-Address Setup Time  
Row-Address Hold Time  
Column-Address Setup Time(20)  
Column-Address Hold Time(20)  
5
5
5
5
0
0
0
0
5
5
5
5
Column-Address Hold Time  
22  
26  
30  
34  
(referenced to RAS)  
tRAD  
tRAL  
tRPC  
tRSH  
tCLZ  
tCRP  
tOD  
RAS to Column-Address Delay Time(11)  
Column-Address to RAS Lead Time  
RAS to CAS Precharge Time  
RAS Hold Time(27)  
8
12  
10  
8
13  
6
8
16  
10  
9
14  
8
8
18  
10  
10  
3
17  
8
8
20  
10  
11  
3
20  
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
CAS to Output in Low-Z(15, 29)  
CAS to RAS Precharge Time(21)  
Output Disable Time(19, 28, 29)  
3
3
5
5
5
5
5
5
5
5
tOE  
Output Enable Time(15, 16)  
8
9
10  
11  
tOES  
tRCS  
tRRH  
OE LOW to CAS HIGH Setup Time  
Read Command Setup Time(17, 20)  
0
0
0
0
Read Command Hold Time  
0
0
0
0
(referenced to RAS)(12)  
tRCH  
Read Command Hold Time  
0
0
0
0
ns  
(referenced to CAS)(12, 17, 21)  
tWCH  
tWCR  
Write Command Hold Time(17, 27)  
5
5
5
5
ns  
ns  
Write Command Hold Time  
22  
26  
30  
34  
(referenced to RAS)(17)  
tWP  
Write Command Pulse Width(17)  
5
7
5
8
5
9
5
10  
8
ns  
ns  
ns  
ns  
ns  
tRWL  
tCWL  
tWCS  
tDHR  
Write Command to RAS Lead Time(17)  
Write Command to CAS Lead Time(17, 21)  
Write Command Setup Time(14, 17, 20)  
Data-in Hold Time (referenced to RAS)  
5
6
7
0
0
0
0
22  
26  
30  
34  
(Continued)  
8
Integrated Circuit Solution Inc.  
DR031-0A 10/17/2001