IS66WVE4M16ALL
Advanced Information
Table 6. Deep Power-Down Specifications
Description
Conditions
Symbol
TYP
MAX
Unit
VIN=VDDQ or 0V; +25°C
ZZ# = 0V, CR[4] = 0
Deep Power-Down
Izz
3
10
uA
Table 7. Capacitance
Description
Conditions
Symbol
MIN
MAX
Unit
Note
TC=+25°C;
f=1Mhz;
VIN=0V
Input Capacitance
CIN
2.0
3.5
6.5
pF
1
Input/Output Capacitance (DQ)
CIO
6.5
pF
1
Notes:
1. These parameters are verified in device characterization and are not 100% tested.
Figure 8. AC Input/Output Reference Waveform
VDDQ
∫∫
Test Points
∫∫
VDDQ/22 Input1
VDDQ/23 Output
VSS
Notes:
1. AC test inputs are driven at VDDQ for a logic 1 and VSS for a logic 0. Input rise and fall times
(10% to 90%) < 1.6ns.
2. Input timing begins at VDDQ/2.
3. Output timing ends at VDDQ/2.
Figure 9. Output Load Circuit
Test Point
50Ω
DUT
VDDQ/2
30pF
19
www.issi.com - SRAM@issi.com
Rev.00C | March 2010
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
