IS66WVE4M16ALL
Advanced Information
Electrical Characteristics
Table 4. Absolute Maximum Ratings
Parameter
Voltage to Any Ball Except VDD, VDDQ Relative to VSS
Voltage on VDD Supply Relative to VSS
Voltage on VDDQ Supply Relative to VSS
Storage Temperature (plastic)
Rating
-0.5V to 4.0V or VDDQ + 0.3V
-0.2V to + 2.45V
-0.2V to + 2.45V
-55°Cto + 150°C
Operating Temperature
-40°C to + 85°C
Soldering Temperature and Time
10s (solder ball only)
+ 260°C
Notes:
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other
conditions above those indicated in this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Table 5. Electrical Characteristics and Operating Conditions
Industrial Temperature (–40ºC < TC < +85ºC)
Description
Conditions
Symbol
MIN
1.7
MAX
1.95
Unit
Note
Supply Voltage
VDD
V
V
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
VDDQ
VIH
VIL
1.7
1.95
VDDQ-0.4
-0.20
VDDQ+0.2
0.4
V
1
2
V
IOH = -0.2mA
IOL = +0.2mA
VIN = 0 to VDDQ
VOH
VOL
ILI
0.80 VDDQ
V
0.20 VDDQ
1
V
uA
OE#=VIH or
Chip Disabled
Output Leakage Current
ILO
1
uA
Unit
mA
Operating Current
Conditions
Symbol
Typ
MAX
30
Note
Asynchronous Random
READ/WRITE
IDD1
IDD1P
ISB
-70
-70
3
VIN = VDDQ or 0V
Chip enabled,
IOUT = 0
Asynchronous
PAGE READ
18
mA
uA
3
4
VIN=VDDQ or 0V
CE# = VDDQ
Standby Current
140
Notes:
1. Input signals may overshoot to VDDQ + 1.0V for periods less than 2ns during transitions.
2. Input signals may undershoot to Vss – 1.0V for periods less than 2ns during transitions.
3. This parameter is specified with the outputs disabled to avoid external loading effects.
User must add required current to drive output capacitance expected in the actual system.
4. ISB (MAX) values measured with PAR set to FULL ARRAY at +85°C. In order to achieve low
standby current, all inputs must be driven to either VDDQ or VSS. ISB might be set slightly
higher for up to 500ms after power-up, or when entering standby mode.
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Rev.00C | March 2010
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
