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66WVE4M16ALL-70TLI 参数 Datasheet PDF下载

66WVE4M16ALL-70TLI图片预览
型号: 66WVE4M16ALL-70TLI
PDF下载: 下载PDF文件 查看货源
内容描述: [Pseudo Static RAM, 4MX16, 70ns, CMOS, PDSO48, TSOP1-48]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 30 页 / 676 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS66WVE4M16ALL  
Advanced Information  
Software Access Sequence  
The contents of the CR can be read or modified using a software access sequence. The  
nature of this access mechanism can potentially eliminate the need for the ZZ# ball.  
If the software-access mechanism is used, ZZ# can simply be tied to VDDQ; the port line  
typically used for ZZ# control purposes will no longer be required. However, ZZ# should  
not be tied to VDDQ if the system will use DPD; DPD cannot be enabled or disabled using  
the software-access sequence.  
The CR is loaded using a four-step sequence consisting of two READ operations followed  
by two WRITE operations (see Figure 6). The READ sequence is virtually identical  
except that an asynchronous READ is performed during the fourth operation (see  
Figure 7).  
The address used during all READ and WRITE operations is the highest address of the  
PSRAM device being accessed (3FFFFFh); the content of this address is not changed by  
using the software-access sequence. The data bus is used to transfer data into or out of  
bit[15:0] of the CR.  
Writing to the CR using the software-access sequence modifies the function of the ZZ#  
ball. After the software sequence loads the CR, the level of the ZZ# ball no longer enables  
PAR operation. PAR operation is updated whenever the software-access sequence loads  
a new value into the CR. This ZZ# functionality will remain active until the next time the  
device is powered up. The operation of the ZZ# ball is not affected if the software-access  
sequence is only used to read the contents of the CR. Use of the software-access sequence  
does not affect the performance of standard (ZZ#-controlled) CR loading.  
Figure 6 : Configuration Register Write  
MAX  
MAX  
MAX  
MAX  
Address  
ADDRESS  
ADDRESS  
ADDRESS  
ADDRESS  
DQ0-  
DQ15  
OUTPUT  
DATA  
OUTPUT  
DATA  
CR  
*Note1  
VALUE IN  
Read  
Read  
Write  
Write  
CE#  
UB#/LB#  
WE#  
OE#  
Notes :  
1. CR : 0000h  
14  
www.issi.com - SRAM@issi.com  
Rev.00C | March 2010  
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