欢迎访问ic37.com |
会员登录 免费注册
发布采购

ISL88731CHRTZ 参数 Datasheet PDF下载

ISL88731CHRTZ图片预览
型号: ISL88731CHRTZ
PDF下载: 下载PDF文件 查看货源
内容描述: SMBus的Level 2电池充电器 [SMBus Level 2 Battery Charger]
分类和应用: 电池
文件页数/大小: 25 页 / 619 K
品牌: INTERSIL [ Intersil ]
 浏览型号ISL88731CHRTZ的Datasheet PDF文件第15页浏览型号ISL88731CHRTZ的Datasheet PDF文件第16页浏览型号ISL88731CHRTZ的Datasheet PDF文件第17页浏览型号ISL88731CHRTZ的Datasheet PDF文件第18页浏览型号ISL88731CHRTZ的Datasheet PDF文件第20页浏览型号ISL88731CHRTZ的Datasheet PDF文件第21页浏览型号ISL88731CHRTZ的Datasheet PDF文件第22页浏览型号ISL88731CHRTZ的Datasheet PDF文件第23页  
ISL88731C  
Low switching loss requires low drain-to-gate charge  
Input Capacitor Selection  
Q . Generally, the lower the drain-to-gate charge, the  
gd  
The input capacitor absorbs the ripple current from the  
synchronous buck converter, which is given by  
Equation 14:  
higher the ON-resistance. Therefore, there is a trade-off  
between the ON-resistance and drain-to-gate charge.  
Good MOSFET selection is based on the Figure of Merit  
(FOM), which is a product of the total gate charge and  
on-resistance. Usually, the smaller the value of FOM, the  
higher the efficiency for the same application.  
V
(
V
V  
OUT  
)
OUT IN  
(EQ.14)  
I
= I  
BAT  
rms  
V
IN  
This RMS ripple current must be smaller than the rated  
RMS current in the capacitor data sheet. Non-tantalum  
chemistries (ceramic, aluminum, or OSCON) are  
preferred due to their resistance to power-up surge  
currents when the AC-adapter is plugged into the battery  
charger. For Notebook battery charger applications, it is  
recommended that ceramic capacitors or polymer  
capacitors from Sanyo be used due to their small size  
and reasonable cost.  
For the low-side MOSFET, the worst-case power  
dissipation occurs at minimum battery voltage and  
maximum input voltage as shown in Equation 10.  
V
2
OUT  
---------------  
P
=
1 –  
I  
r  
DS(ON)  
(EQ. 10)  
Q2  
BAT  
V
IN  
Choose a low-side MOSFET that has the lowest possible  
on-resistance with a moderate-sized package (like the  
8 Ld SOIC) and is reasonably priced. The switching  
losses are not an issue for the low-side MOSFET because  
it operates at zero-voltage-switching.  
Loop Compensation Design  
ISL88731C has three closed loop control modes. One  
controls the output voltage when the battery is fully  
charged or absent. A second controls the current into the  
battery when charging and the third limits current drawn  
from the adapter. The charge current and input current  
control loops are compensated by a single capacitor on  
the ICOMP pin. The voltage control loop is compensated  
by a network on the VCOMP pin. Descriptions of these  
control loops and guidelines for selecting compensation  
components will be given in the following sections. Which  
loop controls the output is determined by the minimum  
current buffer and the minimum voltage buffer shown in  
the “FUNCTIONAL BLOCK DIAGRAM” on page 2. These  
three loops will be described separately.  
Ensure that the required total gate drive current for the  
selected MOSFETs should be less than 24mA. So, the  
total gate charge for the high-side and low-side MOSFETs  
is limited by Equation 11:  
I
GATE  
----------------  
Q
(EQ. 11)  
GATE  
F
SW  
Where I  
is the total gate drive current and should  
GATE  
be less than 24mA. Substituting I  
= 24mA and  
GATE  
f = 400kHz into Equation 11 yields that the total gate  
s
charge should be less than 80nC. Therefore, the  
ISL88731C easily drives the battery charge current up  
to 8A.  
Transconductance Amplifiers GMV, GMI and  
GMS  
ISL88731C uses several transconductance amplifiers  
(also known as gm amps). Most commercially available  
op amps are voltage controlled voltage sources with gain  
Snubber Design  
ISL88731C's buck regulator operates in discontinuous  
current mode (DCM) when the load current is less than  
half the peak-to-peak current in the inductor. After the  
low-side FET turns off, the phase voltage rings due to the  
high impedance with both FETs off. This can be seen in  
Figure 11. Adding a snubber (resistor in series with a  
capacitor) from the phase node to ground can greatly  
reduce the ringing. In some situations, a snubber can  
improve output ripple and regulation.  
expressed as A = V  
controlled current sources with gain expressed as  
/V . gm amps are voltage  
OUT IN  
gm = I /V . gm will appear in some of the equations  
OUT IN  
for poles and zeros in the compensation.  
PWM Gain F  
m
The Pulse Width Modulator in the ISL88731C converts  
voltage at VCOMP to a duty cycle by comparing VCOMP to  
The snubber capacitor should be approximately twice the  
parasitic capacitance on the phase node. This can be  
estimated by operating at very low load current (100mA)  
and measuring the ringing frequency.  
a triangle wave (duty = VCOMP/V  
). The low-pass  
P-P RAMP  
filter formed by L and C convert the duty cycle to a DC  
O
DCIN  
output voltage (Vo = V  
*duty). In ISL88731C, the  
. Making  
triangle wave amplitude is proportional to V  
DCIN  
C
and R  
can be calculated from Equations 12  
the ramp amplitude proportional to DCIN makes the gain  
from VCOMP to the PHASE output a constant 11 and is  
independent of DCIN. For small signal AC analysis, the  
battery is modeled by its internal resistance. The total  
output resistance is the sum of the sense resistor and the  
internal resistance of the MOSFETs, inductor and capacitor.  
Figure 21 shows the small signal model of the pulse width  
modulator (PWM), power stage, output filter and battery.  
SNUB  
SNUB  
and 13:  
2
------------------------------------  
C
=
=
SNUB  
(EQ. 12)  
(EQ. 13)  
2
(2πF  
) ⋅ L  
ring  
2 L  
R
-------------------  
SNUB  
C
SNUB  
FN6978.0  
March 8, 2010  
19  
 复制成功!