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ISL88731CHRTZ 参数 Datasheet PDF下载

ISL88731CHRTZ图片预览
型号: ISL88731CHRTZ
PDF下载: 下载PDF文件 查看货源
内容描述: SMBus的Level 2电池充电器 [SMBus Level 2 Battery Charger]
分类和应用: 电池
文件页数/大小: 25 页 / 619 K
品牌: INTERSIL [ Intersil ]
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ISL88731C  
frequency and a conservative design has F  
CO  
less than  
is in  
output voltage, which is relatively constant. The  
10% of the switching frequency. The highest F  
maximum efficiency is achieved by selecting a high side  
MOSFET that has the conduction losses equal to the  
switching losses. Switching losses in the low-side FET are  
very small. The choice of low-side FET is a trade-off  
CO  
voltage control mode with the battery removed and may  
be calculated (approximately) from Equation 5:  
5 11 RS2  
(EQ. 5)  
-------------------------------  
=
F
CO  
between conduction losses (r  
) and cost. A good  
of the low-side FET is 2x  
2π ⋅ L  
DS(ON)  
rule of thumb for the r  
DS(ON)  
Output Capacitor Selection  
the r  
of the high-side FET.  
DS(ON)  
The output capacitor in parallel with the battery is used  
to absorb the high frequency switching ripple current and  
smooth the output voltage. The RMS value of the output  
The LGATE gate driver can drive sufficient gate current to  
switch most MOSFETs efficiently. However, some FETs  
may exhibit cross conduction (or shoot-through) due to  
current injected into the drain-to-source parasitic  
ripple current I  
is given by Equation 6:  
IN, MAX  
RMS  
V
-----------------------------------  
D ⋅ (1 D)  
I(Cout)  
=
capacitor (C ) by the high dV/dt rising edge at the  
(EQ. 6)  
gd  
RMS  
12 L F  
SW  
phase node when the high side MOSFET turns on.  
Although LGATE sink current (1.8A typical) is more than  
enough to switch the FET off quickly, voltage drops  
across parasitic impedances between LGATE and the  
MOSFET can allow the gate to rise during the fast rising  
edge of voltage on the drain. MOSFETs with low threshold  
Where the duty cycle D is the ratio of the output voltage  
(battery voltage) over the input voltage for continuous  
conduction mode which is typical operation for the  
battery charger. During the battery charge period, the  
output voltage varies from its initial battery voltage to  
the rated battery voltage. So, the duty cycle varies from  
0.53 for the minimum battery voltage of 7.5V (2.5V/Cell)  
to 0.88 for the maximum battery voltage of 12.6V. The  
maximum RMS value of the output ripple current occurs  
at the duty cycle of 0.5 and is expressed as Equation 7:  
voltage (<1.5V) and low ratio of C /C (<5) and high  
gs gd  
gate resistance (>4Ω) may be turned on for a few ns by  
the high dV/dt (rising edge) on their drain. This can be  
avoided with higher threshold voltage and C /C ratio.  
gs gd  
Another way to avoid cross conduction is slowing the  
turn-on speed of the high-side MOSFET by connecting a  
resistor between the BOOT pin and the bootstrap  
capacitor.  
V
IN, MAX  
-------------------------------------------  
I(Cout)  
=
(EQ. 7)  
RMS  
4 12 L F  
SW  
For the high-side MOSFET, the worst-case conduction  
losses occur at the minimum input voltage, as shown in  
Equation 8:  
For V  
IN,MAX  
s
= 19V, VBAT = 16.8V, L = 10µH, and  
f = 400kHz, the maximum RMS current is 0.19A. A  
V
2
OUT  
typical 20µF ceramic capacitor is a good choice to absorb  
this current and also has very small size. Organic  
polymer capacitors have high capacitance with small size  
and have a significant equivalent series resistance (ESR).  
Although ESR adds to ripple voltage, it also creates a  
high frequency zero that helps the closed loop operation  
of the buck regulator.  
(EQ. 8)  
---------------  
P
=
I  
r  
BAT DS(ON)  
Q1, conduction  
V
IN  
The optimum efficiency occurs when the switching losses  
equal the conduction losses. However, it is difficult to  
calculate the switching losses in the high-side MOSFET  
since it must allow for difficult-to-quantify factors that  
influence the turn-on and turn-off times. These factors  
include the MOSFET internal gate resistance, gate  
charge, threshold voltage, stray inductance and the  
pull-up and pull-down resistance of the gate driver.  
EMI considerations usually make it desirable to minimize  
ripple current in the battery leads. Beads may be added  
in series with the battery pack to increase the battery  
impedance at 400kHz switching frequency. Switching  
ripple current splits between the battery and the output  
capacitor depending on the ESR of the output capacitor  
and battery impedance. If the ESR of the output  
capacitor is 10mΩ and battery impedance is raised to 2Ω  
with a bead, then only 0.5% of the ripple current will flow  
in the battery.  
The following switching loss calculation (Equation 9)  
provides a rough estimate.  
P
=
Q1, Switching  
(EQ. 9)  
Q
Q
gd  
1
2
1
2
gd  
--  
------------------------  
--  
-----------------  
V
I
f
+
V
I
f
+ Q V f  
rr IN sw  
IN LV sw  
IN LP sw  
I
I
g, source  
g, sink  
MOSFET Selection  
where the following are the peak gate-drive source/sink  
current of Q , respectively:  
The Notebook battery charger synchronous buck  
converter has the input voltage from the AC-adapter  
output. The maximum AC-adapter output voltage does  
not exceed 25V. Therefore, 30V logic MOSFET should be  
used.  
1
• Q : drain-to-gate charge,  
gd  
• Q : total reverse recovery charge of the body-diode  
rr  
in low-side MOSFET,  
• I : inductor valley current,  
LV  
The high side MOSFET must be able to dissipate the  
conduction losses plus the switching losses. For the  
battery charger application, the input voltage of the  
synchronous buck converter is equal to the AC-adapter  
• I : Inductor peak current,  
LP  
• I  
g,sink  
• I ,  
g source  
FN6978.0  
March 8, 2010  
18  
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