ISL705AEH, ISL705BEH, ISL705CEH, ISL706AEH, ISL706BEH, ISL706CEH
Absolute Maximum Ratings
Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6.5V
Voltage on All Other Inputs . . . . . . . . . . . . . . . . . . . . . . . -0.3V to V
DD
+ 0.3V
ESD Rating
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . .3.0kV
Machine Model (Tested per JESD22-A115C) . . . . . . . . . . . . . . . . . . 300V
Charged Device Model (Tested per JESD22-C110D) . . . . . . . . . . . .1.0kV
Latch Up (Tested per JESD-78C) . . . . . . . . . . . . . . . . . . . . . . Class 2, Level A
Thermal Information
Thermal Resistance (Typical)
θ
JA
(°C/W)
θ
JC
(°C/W)
8 Ld Flatpack Package (Notes 3, 4). . . . . .
140
15
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175°C
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Recommended Operating Conditions
Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Supply Voltage
ISL705AEH/BEH/CEH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.75V to 5.5V
ISL706AEH/BEH/CEH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.15V to 3.6V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
for details.
4. For
θ
JC
, the “case temp” location is the center of the package underside.
Electrical Specifications
Unless otherwise specified V
DD
= 4.75V to 5.5V for the ISL705AEH/BEH/CEH, V
DD
= 3.15V to 3.6V for the
ISL706AEH/BEH/CEH T
A
= -55°C to +125°C. Boldface limits apply over the operating temperature range, -55°C to +125°C; over a total ionizing dose of
100krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of
<10mrad(Si)/s.
SYMBOL
POWER SUPPLY SECTION
V
DD
Operating Supply Voltage (Note 7)
ISL705AEH/BEH/CEH
ISL706AEH/BEH/CEH
I
DD
Operating Supply Current
ISL705AEH/BEH/CEH
ISL706AEH/BEH/CEH
RESET SECTION
V
RST
Reset Threshold Voltage
ISL705AEH/BEH/CEH
ISL706AEH/BEH/CEH
V
HYS
Reset Threshold Voltage Hysteresis
ISL705AEH/BEH/CEH
ISL706AEH/BEH/CEH
t
RST
V
OUT
Reset Pulse Width
Reset Output Voltage
ISL705AEH/BEH, I
SOURCE
= 800µA
ISL705AEH/BEH/CEH, I
SINK
= 3.2mA
ISL706AEH/BEH, I
SOURCE
= 500µA
ISL706AEH/BEH/CEH, I
SINK
= 1.2mA
ISL70XAEH/CEH, V
DD
= 1.2V, I
SINK
= 100µA
ISL70XBEH, V
DD
= 1.2V, I
SOURCE
= 4µA
I
LEAK
Reset Output Leakage Current
ISL705CEH, V
OUT
= V
DD
ISL706CEH, V
OUT
= V
DD
0.9
1
1
0.8 x V
DD
0.3
0.3
4.50
3.00
20
20
140
V
DD
- 1.5
0.4
4.65
3.08
40
30
200
280
4.75
3.15
V
V
mV
mV
ms
V
V
V
V
V
V
µA
µA
1.2
1.2
5
3.3
5.5
3.6
530
400
V
V
µA
µA
PARAMETER
CONDITIONS
MIN
(Note 5)
TYP
MAX
(Note 6) (Note 5) UNITS
5
FN8262.0
March 30, 2012
INTERSIL [ INTERSIL CORPORATION ]
