28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
AC Characteristics—Write Operations, continued
Density
Product
32 Mbit
90 ns
70 ns
90 ns
110 ns
#
Sym
Parameter
Unit
2.7 V –
3.6 V
2.7 V –
3.6 V
3.0 V –
3.3 V
2.7 V –
3.3 V
3.0 V –
3.3 V
2.7 V –
3.3 V
VCC
Note
Min
Min
Min
Min
Min
Min
tPHWL
tPHEL
/
RP# High Recovery to WE# (CE#)
Going Low
W1
W2
W3
W4
W5
W6
W7
W8
W9
W10
150
150
600
0
600
600
0
600
ns
ns
ns
ns
ns
ns
ns
ns
ns
tELWL
tWLEL
/
CE# (WE#) Setup to WE# (CE#) Going
Low
0
45
40
50
0
0
60
40
60
0
0
70
50
70
0
0
70
60
70
0
tELEH
tWLWH
/
WE# (CE#) Pulse Width
1
2
2
70
50
70
0
70
60
70
0
tDVWH
tDVEH
/
/
/
/
/
Data Setup to WE# (CE#) Going High
tAVWH
tAVEH
Address Setup to WE# (CE#) Going
High
tWHEH
tEHWH
CE# (WE#) Hold Time from WE#
(CE#) High
tWHDX
tEHDX
Data Hold Time from WE# (CE#) High
2
2
1
0
0
0
0
0
0
tWHAX
tEHAX
Address Hold Time from WE# (CE#)
High
0
0
0
0
0
0
tWHWL /
tEHEL
WE# (CE#) Pulse Width High
25
30
30
30
30
30
tVPWH
tVPEH
/
VPP Setup to WE# (CE#) Going High
VPP Hold from Valid SRD
3
3
200
0
200
0
200
0
200
0
200
0
200
0
ns
ns
W11 tQVVL
NOTES:
1. Refer to command definition table (Table 6) for valid A or D
.
IN
IN
2. Write pulse width (t ) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going
WP
high (whichever goes high first). Hence, t
= t
= t
= t
= t
. Similarly, Write pulse width
WP
WLWH
ELEH
WLEH
ELWH
high (t
) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low
WPH
(whichever goes low first). Hence, t
3. Sampled, but not 100% tested.
= t
= t
= t
= t
.
WPH
WHWL
EHEL
WHEL
EHWL
Read timing characteristics during program suspend and erase suspend are the same as during read-only
operations.
See Figure 5 for timing measurements and maximum allowable input slew rate.
See Figure 8, “AC Waveform: Program and Erase Operations” on page 32.
3UHOLPLQDU\
29