28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
4.7
Program and Erase Timings
V
2.7 V–3.6 V
11.4 V–12.6 V
PP
Symbol
Parameter
Units
Notes
Typ(1)
Max
Typ(1)
Max
8-KB Parameter Block
Program Time (Byte)
2, 3
0.16
0.10
1.2
0.48
0.08
0.24
s
s
s
t
t
BWPB
4-KW Parameter Block
Program Time (Word)
2, 3
0.30
3.7
0.03
0.6
0.12
1.7
64-KB Main Block
Program Time (Byte)
2, 3, 4
BWMB
32-KW Main Block
Program Time(Word)
2, 3
2, 3, 4
2,3
0.8
17
12
2.4
165
200
0.24
8
1
s
Byte Program Time
185
185
µs
µs
Word Program Time for
0.18 Micron Product
8
t
/ t
WHQV1 EHQV1
Word Program Time for 0.25
Micron and 0.4 Micron Products
2, 3
2, 3, 4
2, 3
22
1
200
4
8
185
4
µs
s
8-KB Parameter Block
Erase Time (Byte)
0.8
0.4
1
t
t
/ t
WHQV2 EHQV2
4-KW Parameter Block
Erase Time (Word)
0.5
1
4
4
s
64-KB Main Block
Erase Time (Byte)
2, 3, 4
2, 3
5
5
s
/ t
WHQV3 EHQV3
32-KW Main Block
Erase Time (Word)
1
5
0.6
5
s
t
t
/ t
Program Suspend Latency
Erase Suspend Latency
5
5
10
20
5
5
10
20
µs
µs
WHRH1 EHRH1
/ t
WHRH2 EHRH2
NOTES:
1. Typical values measured at nominal voltages and T = +25 °C.
A
2. Excludes external system-level overhead.
3. Sampled, not 100% tested.
4. x8 not available on 0.18 µm offerings
3UHOLPLQDU\
31
INTEL [ INTEL ]
