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TE28F128J3C-150 参数 Datasheet PDF下载

TE28F128J3C-150图片预览
型号: TE28F128J3C-150
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔StrataFlash闪存( J3 ) [Intel StrataFlash Memory (J3)]
分类和应用: 闪存
文件页数/大小: 72 页 / 909 K
品牌: INTEL [ INTEL ]
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256-Mbit J3 (x8/x16)  
7.4  
Reset Operation  
Figure 14. AC Waveform for Reset Operation  
VIH  
STS (R)  
VIL  
P2  
VIH  
RP# (P)  
VIL  
P1  
NOTE: STS is shown in its default mode (RY/BY#).  
Table 11. Reset Specifications  
#
Sym  
Parameter  
Min  
Max  
Unit  
Notes  
RP# Pulse Low Time  
P1  
t
t
(If RP# is tied to V , this specification is not  
applicable)  
35  
µs  
1,2  
PLPH  
CC  
RP# High to Reset during Block Erase, Program, or  
Lock-Bit Configuration  
P2  
100  
ns  
1,3  
PHRH  
NOTES:  
1. These specifications are valid for all product versions (packages and speeds).  
2. If RP# is asserted while a block erase, program, or lock-bit configuration operation is not  
executing then the minimum required RP# Pulse Low Time is 100 ns.  
3. A reset time, t  
, is required from the latter of STS (in RY/BY# mode) or RP# going high until  
PHQV  
outputs are valid.  
7.5  
AC Test Conditions  
Figure 15. Transient Input/Output Reference Waveform for VCCQ = 2.7 V–3.6 V  
VCCQ  
Input VCCQ/2  
0.0  
Test Points  
VCCQ/2 Output  
NOTE: AC test inputs are driven at V  
for a Logic "1" and 0.0 V for a Logic "0." Input timing begins, and  
CCQ  
output timing ends, at V  
/2 V (50% of V  
). Input rise and fall times (10% to 90%) < 5 ns.  
CCQ  
CCQ  
Datasheet  
29  
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