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TE28F128J3C-150 参数 Datasheet PDF下载

TE28F128J3C-150图片预览
型号: TE28F128J3C-150
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔StrataFlash闪存( J3 ) [Intel StrataFlash Memory (J3)]
分类和应用: 闪存
文件页数/大小: 72 页 / 909 K
品牌: INTEL [ INTEL ]
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256-Mbit J3 (x8/x16)  
8.0  
8.1  
8.2  
Power and Reset Specifications  
This section provides an overview of system level considerations for the Intel StrataFlash®  
memory family device. This section provides a brief description of power-up, power-down,  
decoupling and reset design considerations.  
Power-Up/Down Characteristics  
In order to prevent any condition that may result in a spurious write or erase operation, it is  
recommended to power-up and power-down VCC and VCCQ together. It is also recommended to  
power-up VPEN with or slightly after VCC. Conversely, VPEN must power down with or slightly  
before VCC.  
Power Supply Decoupling  
When the device is enabled, many internal conditions change. Circuits are energized, charge pumps  
are switched on, and internal voltage nodes are ramped. All of this internal activities produce  
transient signals. The magnitude of the transient signals depends on the device and system loading.  
To minimize the effect of these transient signals, a 0.1 µF ceramic capacitor is required across each  
VCC/VSS and VCCQ signal. Capacitors should be placed as close as possible to device  
connections.  
Additionally, for every eight flash devices, a 4.7 µF electrolytic capacitor should be placed between  
VCC and VSS at the power supply connection. This 4.7 µF capacitor should help overcome  
voltage slumps caused by PCB (printed circuit board) trace inductance.  
8.3  
Reset Characteristics  
By holding the flash device in reset during power-up and power-down transitions, invalid bus  
conditions may be masked. The flash device enters reset mode when RP# is driven low. In reset,  
internal flash circuitry is disabled and outputs are placed in a high-impedance state. After return  
from reset, a certain amount of time is required before the flash device is able to perform normal  
operations. After return from reset, the flash device defaults to asynchronous page mode. If RP# is  
driven low during a program or erase operation, the program or erase operation will be aborted and  
the memory contents at the aborted block or address are no longer valid. See Figure 14, “AC  
Waveform for Reset Operation” on page 29 for detailed information regarding reset timings.  
Datasheet  
31  
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