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PA28F016SC-120 参数 Datasheet PDF下载

PA28F016SC-120图片预览
型号: PA28F016SC-120
PDF下载: 下载PDF文件 查看货源
内容描述: 字节宽SmartVoltage FlashFile⑩ Memory系列4 ,8和16 MBIT [BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT]
分类和应用:
文件页数/大小: 42 页 / 723 K
品牌: INTEL [ INTEL ]
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BYTE-WIDE SmartVoltage FlashFile™ MEMORY FAMILY  
E
When the block erase is complete, status register  
bit SR.5 should be checked. If a block erase error is  
detected, the status register should be cleared  
before system software attempts corrective actions.  
The CUI remains in read status register mode until  
a new command is issued.  
Successful program also requires that the  
corresponding block lock-bit be cleared or, if set,  
that RP# = VHH. If program is attempted when the  
corresponding block lock-bit is set and RP# = VIH,  
program will fail, and SR.1 and SR.4 will be set to  
“1.” Program operations with VIH < RP# < VHH  
produce spurious results and should not be  
attempted.  
This two-step command sequence of set-up  
followed by execution ensures that block contents  
are not accidentally erased. An invalid Block Erase  
command sequence will result in both status  
register bits SR.4 and SR.5 being set to “1.” Also,  
reliable block erasure can only occur when  
4.7  
Block Erase Suspend  
Command  
V
CC = VCC2/3 and VPP = VPPH1/2/3. In the absence of  
The Block Erase Suspend command allows  
block-erase interruption to read or write data in  
another block of memory. Once the block erase  
process starts, writing the Block Erase Suspend  
command requests that the WSM suspend the  
block erase sequence at a predetermined point in  
the algorithm. The device outputs status register  
data when read after the Block Erase Suspend  
command is written. Polling status register bits  
SR.7 and SR.6 can determine when the block erase  
operation has been suspended (both will be set to  
this high voltage, block contents are protected  
against erasure. If block erase is attempted while  
VPP VPPLK, SR.3 and SR.5 will be set to “1.”  
Successful block erase requires that the  
corresponding block lock-bit be cleared or, if set,  
that RP# = VHH. If block erase is attempted when  
the corresponding block lock-bit is set and  
RP# = VIH, the block erase will fail, and SR.1 and  
SR.5 will be set to “1.” Block erase operations with  
VIH < RP# < VHH produce spurious results and  
should not be attempted.  
“1”). RY/BY# will also transition to VOH  
.
Specification tWHRH2 defines the block erase  
suspend latency.  
4.6  
Program Command  
At this point, a Read Array command can be written  
to read data from blocks other than that which is  
suspended. A Program command sequence can  
also be issued during erase suspend to program  
data in other blocks. Using the Program Suspend  
command (see Section 4.8), a program operation  
can also be suspended. During a program operation  
with block erase suspended, status register bit  
SR.7 will return to “0” and the RY/BY# output will  
transition to VOL. However, SR.6 will remain “1” to  
indicate block erase suspend status.  
Program is executed by a two-cycle command  
sequence. Program setup (standard 40H or  
alternate 10H) is written, followed by a second write  
that specifies the address and data (latched on the  
rising edge of WE#). The WSM then takes over,  
controlling the program and write verify algorithms  
internally. After the program sequence is written,  
the device automatically outputs status register  
data when read (see Figure 8). The CPU can detect  
the completion of the program event by analyzing  
the RY/BY# pin or status register bit SR.7.  
The only other valid commands while block erase is  
suspended are Read Status Register and Block  
When program is complete, status register bit SR.4  
should be checked. If program error is detected, the  
status register should be cleared. The internal WSM  
verify only detects errors for “1”s that do not  
successfully write to “0”s. The CUI remains in read  
status register mode until it receives another  
command.  
Erase Resume. After  
a Block Erase Resume  
command is written to the flash memory, the WSM  
will continue the block erase process. Status  
register bits SR.6 and SR.7 will automatically clear  
and RY/BY# will return to VOL. After the Erase  
Resume command is written, the device  
automatically outputs status register data when  
read (see Figure 9). VPP must remain at VPPH1/2/3  
(the same VPP level used for block erase) while  
block erase is suspended. RP# must also remain at  
VIH or VHH (the same RP# level used for block  
erase). Block erase cannot resume until program  
operations initiated during block erase suspend  
have completed.  
Reliable programs only occurs when VCC = VCC2/3  
and VPP = VPPH1/2/3. In the absence of this high  
voltage, memory contents are protected against  
programs. If program is attempted while  
VPP VPPLK, the operation will fail, and status  
register bits SR.3 and SR.5 will be set to “1.”  
18  
PRELIMINARY  
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