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JS28F128P30T85 参数 Datasheet PDF下载

JS28F128P30T85图片预览
型号: JS28F128P30T85
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔的StrataFlash嵌入式存储器 [Intel StrataFlash Embedded Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 102 页 / 1616 K
品牌: INTEL [ INTEL ]
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1-Gbit P30 Family  
Table 20.  
Command Bus Cycles (Sheet 2 of 2)  
First Bus Cycle  
Second Bus Cycle  
Bus  
Command  
Mode  
Cycles  
Oper  
Addr(1)  
Data(2)  
Oper  
Addr(1)  
Data(2)  
Program Protection Register  
Program Lock Register  
2
2
Write  
Write  
PRA  
LRA  
0xC0  
0xC0  
Write  
Write  
PRA  
LRA  
PD  
Protection  
LRD  
Program Read Configuration  
Register  
Configuration  
2
Write  
RCD  
0x60  
Write  
RCD  
0x03  
Notes:  
1.  
First command cycle address should be the same as the operation’s target address.  
DBA = Device Base Address (NOTE: needed for 2 or more die stacks)  
IA = Identification code address offset.  
QA = CFI Query address offset.  
WA = Word address of memory location to be written.  
BA = Address within the block.  
PRA = Protection Register address.  
LRA = Lock Register address.  
RCD = Read Configuration Register data on A[15:0].  
ID = Identifier data.  
2.  
QD = Query data on DQ[15:0].  
SRD = Status Register data.  
WD = Word data.  
N = Word count of data to be loaded into the write buffer.  
PD = Protection Register data.  
LRD = Lock Register data.  
3.  
4.  
The second cycle of the Buffered Program Command is the word count of the data to be loaded into the write buffer. This  
is followed by up to 32 words of data.Then the confirm command (0xD0) is issued, triggering the array programming  
operation.  
The confirm command (0xD0) is followed by the buffer data.  
9.3  
Command Definitions  
Valid device command codes and descriptions are shown in Table 21.  
Table 21.  
Command Codes and Definitions (Sheet 1 of 2)  
Mode  
Code  
Device Mode  
Description  
0xFF Read Array  
Places the device in Read Array mode. Array data is output on DQ[15:0].  
Places the device in Read Status Register mode. The device enters this mode  
0x70 Read Status Register after a program or erase command is issued. Status Register data is output on  
DQ[7:0].  
Read Device ID  
0x90 or Configuration  
Register  
Places device in Read Device Identifier mode. Subsequent reads output  
manufacturer/device codes, Configuration Register data, Block Lock status, or  
Protection Register data on DQ[15:0].  
Read  
Places the device in Read Query mode. Subsequent reads output Common  
Flash Interface information on DQ[7:0].  
0x98 Read Query  
The WSM can only set Status Register error bits. The Clear Status Register  
command is used to clear the SR error bits.  
0x50 Clear Status Register  
First cycle of a 2-cycle programming command; prepares the CUI for a write  
operation. On the next write cycle, the address and data are latched and the  
WSM executes the programming algorithm at the addressed location. During  
program operations, the device responds only to Read Status Register and  
Program Suspend commands. CE# or OE# must be toggled to update the  
Status Register in asynchronous read. CE# or ADV# must be toggled to update  
the Status Register Data for synchronous Non-array reads. The Read Array  
command must be issued to read array data after programming has finished.  
Write  
0x40 Word Program Setup  
Datasheet  
Intel StrataFlash® Embedded Memory (P30)  
Order Number: 306666, Revision: 001  
April 2005  
51  
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