28F010
DC CHARACTERISTICSÐCMOS COMPATIBLEÐCommercial Products (Continued)
Limits
Symbol
Parameter
Notes
Unit
Test Conditions
(4)
Min
Typical
1.0
Max
10
I
I
I
V
CC
V
CC
V
CC
Programming Current
Erase Current
1, 2
1, 2
mA Programming in Progress
mA Erasure in Progress
CC2
CC3
CC4
5.0
15
e
Program Verify Current 1, 2
5.0
15
mA
V
V , Program
PPH
PP
Verify in Progress
e
V
PP
I
V
Erase Verify Current
1, 2
5.0
90
15
mA
V
, Erase
CC5
CC
PPH
Verify in Progress
s
g
I
I
V
V
Leakage Current
Read Current, ID
1
1
10
mA
mA
V
PP
V
PP
V
PP
V
PP
V
CC
V
CC
V
CC
PPS
PP1
PP
l
s
e
200
PP
Current or Standby Current
g
10
I
I
I
I
V
Programming
1, 2
1, 2
1, 2
1, 2
8.0
6.0
2.0
2.0
30
mA
mA
mA
mA
V
PPH
PP2
PP3
PP4
PP5
PP
Current
Programming in Progress
e
V
PPH
V
PP
Erase Current
30
5.0
5.0
V
PP
Erasure in Progress
e
V
PP
Program Verify
V
V
PPH
, Program
PP
Verify in Progress
Current
Erase Verify
e
V
PP
V
V
PPH
, Erase
PP
Verify in Progress
Current
b
V
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
0.5
0.8
V
V
V
IL
a
0.7 V
CC
V
0.5
IH
OL
CC
e
e
0.45
V
V
Min
CC
CC
5.8 mA
I
OL
e
e b
e b
V
V
V
0.85 V
V
V
V
Min, I
Min, I
2.5 mA
OH1
OH2
ID
CC
CC
CC
CC
OH
Output High Voltage
V
V
b
e
V
CC
0.4
V
100 mA
CC
OH
A
Intelligent Identifier
11.50
13.00
200
9
Voltage
e
V
ID
I
A
Intelligent Identifier
1, 2
90
mA
V
A
ID
9
9
Current
V
PPL
V
PPH
V
LKO
V
during Read-Only
0.00
11.40
2.5
6.5
NOTE: Erase/Programs are
PP
Operations
e
Inhibited when V
PP
V
PPL
V
during Read/Write
12.60
V
PP
Operations
V
Erase/Write Lock
V
CC
Voltage
16