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F28F010-90 参数 Datasheet PDF下载

F28F010-90图片预览
型号: F28F010-90
PDF下载: 下载PDF文件 查看货源
内容描述: 1024K ( 128K ×8 )的CMOS FLASH MEMORY [1024K (128K x 8) CMOS FLASH MEMORY]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 30 页 / 407 K
品牌: INTEL [ INTEL ]
 浏览型号F28F010-90的Datasheet PDF文件第8页浏览型号F28F010-90的Datasheet PDF文件第9页浏览型号F28F010-90的Datasheet PDF文件第10页浏览型号F28F010-90的Datasheet PDF文件第11页浏览型号F28F010-90的Datasheet PDF文件第13页浏览型号F28F010-90的Datasheet PDF文件第14页浏览型号F28F010-90的Datasheet PDF文件第15页浏览型号F28F010-90的Datasheet PDF文件第16页  
28F010  
Bus  
Operation  
Command  
Comments  
e
Entire Memory Must  
Before Erasure  
00H  
Use Quick Pulse  
Programming Algorithm  
(Figure 5)  
Standby  
Wait for V Ramp to V (1)  
PP PPH  
Initialize Addresses and  
Pulse-Count  
e
e
Write  
Write  
Set-up  
Erase  
Data  
Data  
20H  
20H  
Erase  
Standby  
Write  
Duration of Erase Operation  
)
(t  
WHWH2  
(2)  
e
e
Erase  
Verify  
Addr  
Data  
Byte to Verify;  
A0H; Stops Erase  
(3)  
Operation  
t
WHGL  
Standby  
Read  
Read Byte to Verify Erasure  
Standby  
Compare Output to FFH  
Increment Pulse-Count  
e
Data 00H, Resets the  
Register for Read Operations  
Write  
Read  
Standby  
Wait for V Ramp to V (1)  
PP PPL  
290207–6  
1. See DC Characteristics for the value of V and  
3. Refer to principles of operation.  
PPH  
V
.
PPL  
4. CAUTION: The algorithm MUST BE FOLLOWED  
to ensure proper and reliable operation of the de-  
vice.  
2. Erase Verify is performed only after chip-erasure. A  
final read/compare may be performed (optional) after  
the register is written with the read command.  
Figure 6. 28F010 Quick Erase Algorithm  
12  
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