28F010
DC CHARACTERISTICSÐTTL/NMOS COMPATIBLEÐExtended Temperature
Products
Limits
(4)
Symbol
Parameter
Notes
Unit
Test Conditions
Min Typical
Max
e
V
g
I
I
I
I
Input Leakage Current
Output Leakage Current
1
1
1
1
1.0
mA V
V
Max
CC
LI
CC
IN
e
V
or V
CC SS
e
g
10
mA V
V
V
Max
CC
or V
CC SS
LO
CC
e
V
OUT
e
V
V
Standby Current
0.3
10
1.0
mA V
CC
CE
V
V
IH
Max
CC
CCS
CC1
CC
CC
e
Ý
e
6 MHz, I
e
Ý
V
0 mA
Active Read Current
30
mA V
f
V
Max, CE
e
CC
e
CC
IL
OUT
I
I
I
V
V
V
Programming Current
Erase Current
1, 2
1, 2
1, 2
1.0
5.0
5.0
30
30
30
mA Programming in Progress
mA Erasure in Progress
CC2
CC3
CC4
CC
CC
CC
e
V
PPH
Program Verify Current
mA V
PP
Program Verify in Progress
e
V
PPH
I
V
Erase Verify Current
1, 2
5.0
90
30
mA V
CC5
CC
PP
Erase Verify in Progress
s
g
I
I
V
V
Leakage Current
Read Current
1
1
10
mA V
mA V
V
V
V
V
PPS
PP1
PP
PP
PP
PP
PP
PP
CC
CC
CC
l
s
e
200
or Standby Current
g
10.0
I
I
I
I
V
V
V
V
Programming Current
Erase Current
1, 2
1, 2
1, 2
1, 2
8.0
6.0
2.0
2.0
30
mA V
V
PPH
PP2
PP3
PP4
PP5
PP
PP
PP
PP
Programming in Progress
e
V
PPH
30
5.0
5.0
0.8
mA V
PP
Erasure in Progress
e
V
PPH
Program Verify Current
Erase Verify Current
mA V
PP
Program Verify in Progress
e
Erase Verify in Progress
mA V
V
PPH
PP
b
V
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
0.5
V
V
V
IL
a
CC
2.0
V
0.5
IH
OL
e
0.45
V
V
5.8 mA
Min
CC
CC
e
I
OL
e
V
V
Output High Voltage
2.4
V
V
V
I
V
e b
Min
CC
2.5 mA
OH1
ID
CC
OH
A
A
V
Intelligent Identifer Voltage
11.50
13.00
500
9
e
V
ID
I
Intelligent Identifier Current 1, 2
90
mA A
ID
9
9
V
V
V
during Read-Only
0.00
11.40
2.5
6.5
V
V
V
NOTE: Erase/Program are
Inhibited when V
PPL
PPH
LKO
PP
e
V
PPL
Operations
PP
V during Read/Write
PP
Operations
12.60
V
Erase/Write Lock Voltage
CC
17
INTEL [ INTEL ]
