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EPM1270GF100I4N 参数 Datasheet PDF下载

EPM1270GF100I4N图片预览
型号: EPM1270GF100I4N
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash PLD, PBGA100, 11 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-100]
分类和应用: 输入元件可编程逻辑
文件页数/大小: 98 页 / 1060 K
品牌: INTEL [ INTEL ]
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Power-On Reset Circuitry  
Figure 4–5. Power-Up Characteristics for MAX II & MAX II G Devices  
Notes (1), (2)  
MAX II Device  
V
CCINT  
Approximate Voltage  
for SRAM Download Start  
3.3 V  
2.5 V  
Device Resets  
the SRAM and  
Tri-States I/O Pins  
1.7 V  
1.4 V  
t
CONFIG  
0 V  
User Mode  
Operation  
Tri-State  
Tri-State  
MAX II G Device  
V
CCINT  
3.3 V  
1.8 V  
Approximate Voltage  
for SRAM Download Start  
Device Resets  
the SRAM and  
Tri-States I/O Pins  
1.55 V  
1.4 V  
t
CONFIG  
0 V  
User Mode  
Operation  
Tri-State  
Tri-State  
Notes to Figure 4–5:  
(1) Time scale is relative.  
(2) Figure 4–5 assumes all VCCIO banks power simultaneously with the VCCINT profile shown. If not, tCONFIG stretches  
out until all VCCIO banks are powered.  
1
After SRAM configuration, all registers in the device are cleared  
and released into user function before I/O tri-states are released.  
To release clears after tri-states are released, use the DEV_CLRn  
pin option. To hold the tri-states beyond the power-up  
configuration time, use the DEV_OEpin option.  
4–8  
MAX II Device Handbook, Volume 1  
Core Version a.b.c variable  
Altera Corporation  
February 2006  
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