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EP4CE22E22I7N 参数 Datasheet PDF下载

EP4CE22E22I7N图片预览
型号: EP4CE22E22I7N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 1395 CLBs, 472.5MHz, 22320-Cell, PQFP144, 22 X 22 MM, 0.50 MM PITCH, LEAD FREE, EQFP-144]
分类和应用: 时钟LTEPC可编程逻辑
文件页数/大小: 44 页 / 663 K
品牌: INTEL [ INTEL ]
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1–6  
Chapter 1: Cyclone IV Device Datasheet  
Operating Conditions  
Table 1–4. Recommended Operating Conditions for Cyclone IV GX Devices (Part 2 of 2)  
Symbol  
VCCA_GXB  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Transceiver PMA and auxiliary power  
supply  
2.375  
2.5  
2.625  
V
Transceiver PMA and auxiliary power  
supply  
VCCL_GXB  
1.16  
1.2  
1.24  
V
VI  
DC input voltage  
DC output voltage  
–0.5  
0
3.6  
VCCIO  
85  
V
V
VO  
For commercial use  
For industrial use  
Standard power-on reset  
0
°C  
°C  
TJ  
Operating junction temperature  
–40  
100  
50 µs  
50 µs  
50 ms  
3 ms  
10  
(7)  
(POR)  
tRAMP  
Power supply ramp time  
(8)  
Fast POR  
Magnitude of DC current across  
PCI-clamp diode when enabled  
IDiode  
mA  
Notes to Table 1–4:  
(1) All VCCA pins must be powered to 2.5 V (even when PLLs are not used) and must be powered up and powered down at the same time.  
(2) You must connect VCCD_PLL to VCCINT through a decoupling capacitor and ferrite bead.  
(3) Power supplies must rise monotonically.  
(4) VCCIO for all I/O banks must be powered up during device operation. Configurations pins are powered up by VCCIO of I/O Banks 3, 8, and 9 where  
I/O Banks 3 and 9 only support VCCIO of 1.5, 1.8, 2.5, 3.0, and 3.3 V. For fast passive parallel (FPP) configuration mode, the VCCIO level of I/O  
Bank 8 must be powered up to 1.5, 1.8, 2.5, 3.0, and 3.3 V.  
(5) You must set VCC_CLKIN to 2.5 V if you use CLKIN as a high-speed serial interface (HSSI) refclk or as a DIFFCLK input.  
(6) The CLKIN pins in I/O Banks 3B and 8B can support single-ended I/O standard when the pins are used to clock left PLLs in non-transceiver  
applications.  
(7) The POR time for Standard POR ranges between 50 and 200 ms. VCCINT, VCCA, and VCCIO of I/O Banks 3, 8, and 9 must reach the recommended  
operating range within 50 ms.  
(8) The POR time for Fast POR ranges between 3 and 9 ms. VCCINT, VCCA, and VCCIO of I/O Banks 3, 8, and 9 must reach the recommended operating  
range within 3 ms.  
ESD Performance  
This section lists the electrostatic discharge (ESD) voltages using the human body  
model (HBM) and charged device model (CDM) for Cyclone IV devices general  
purpose I/Os (GPIOs) and high-speed serial interface (HSSI) I/Os. Table 1–5 lists the  
ESD for Cyclone IV devices GPIOs and HSSI I/Os.  
Table 1–5. ESD for Cyclone IV Devices GPIOs and HSSI I/Os  
Symbol  
VESDHBM  
Parameter  
ESD voltage using the HBM (GPIOs) (1)  
Passing Voltage  
Unit  
V
2000  
1000  
500  
(2)  
ESD using the HBM (HSSI I/Os)  
V
ESD using the CDM (GPIOs)  
V
VESDCDM  
(2)  
ESD using the CDM (HSSI I/Os)  
250  
V
Notes to Table 1–5:  
(1) The passing voltage for EP4CGX15 and EP4CGX30 row I/Os is 1000V.  
(2) This value is applicable only to Cyclone IV GX devices.  
Cyclone IV Device Handbook,  
Volume 3  
March 2016 Altera Corporation  
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