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E28F200B5B80 参数 Datasheet PDF下载

E28F200B5B80图片预览
型号: E28F200B5B80
PDF下载: 下载PDF文件 查看货源
内容描述: 智能5引导块闪存系列2 , 4 , 8兆比特 [SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 38 页 / 500 K
品牌: INTEL [ INTEL ]
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E
SMART 5 BOOT BLOCK MEMORY FAMILY  
4.1.3  
STANDBY POWER  
of the state of its control inputs. By holding the  
device in reset (RP# connected to system  
PowerGood) during power-up/down, invalid bus  
conditions during power-up can be masked,  
providing yet another level of memory protection.  
When CE# is at a logic-high level (VIH), and the  
device is not programming or erasing, the memory  
enters in standby mode, which disables much of the  
device’s circuitry and substantially reduces power  
consumption. Outputs (DQ0–DQ15 or DQ0–DQ7) are  
placed in a high-impedance state independent of  
the status of the OE# signal. When CE# is at logic-  
high level during program or erase operations, the  
device will continue to perform the operation and  
consume corresponding active power until the  
operation is completed.  
4.2.1  
RP# CONNECTED TO SYSTEM  
RESET  
Using RP# properly during system reset is  
important with automated program/erase devices  
because the system expects to read from the flash  
memory when it comes out of reset. If a CPU reset  
occurs without a flash memory reset, proper CPU  
initialization would not occur because the flash  
memory may in a mode other than Read Array.  
Intel’s Flash memories allow proper CPU  
initialization following a system reset by connecting  
the RP# pin to the same RESET# signal that resets  
the system CPU.  
4.1.4  
DEEP POWER-DOWN MODE  
The Smart 5 boot block family supports a low  
typical ICCD in deep power-down mode, which turns  
off all circuits to save power. This mode is activated  
by the RP# pin when it is at a logic-low (GND ±  
0.2 V). Note: BYTE# pin must be at CMOS levels to  
meet the ICCD specification.  
4.3  
Board Design  
During read modes, the RP# pin going low de-  
selects the memory and places the output drivers in  
a high impedance state. Recovery from the deep  
power-down state, requires a minimum access time  
of tPHQV. RP# transitions to VIL, or turning power off  
to the device will clear the status register.  
4.3.1  
POWER SUPPLY DECOUPLING  
Flash memory’s switching characteristics require  
careful decoupling methods. System designers  
should consider three supply current issues:  
standby current levels (ICCS), active current levels  
(ICCR), and transient peaks produced by falling and  
rising edges of CE#.  
During an program or erase operation, RP# going  
low for time tPLPH will abort the operation, but the  
location’s memory contents will no longer valid and  
additional timing must be met. See Section 3.1.5  
Transient current magnitudes depend on the device  
outputs’ capacitive and inductive loading. Two-line  
control and proper decoupling capacitor selection  
will suppress these transient voltage peaks. Each  
and  
Figure 15 and Table 9 for additional  
information.  
flash device should have  
a 0.1 µF ceramic  
4.2  
Power-Up/Down Operation  
capacitor connected between VCC and GND, and  
between VPP and GND. These high-frequency,  
inherently low-inductance capacitors should be  
placed as close as possible to the package leads.  
The device protects against accidental block  
erasure or programming during power transitions.  
Power supply sequencing is not required, so either  
VPP or VCC can power-up first. The CUI defaults to  
the read mode after power-up, but the system must  
drop CE# low or present an address to receive valid  
data at the outputs.  
4.3.2  
V
PP TRACE ON PRINTED CIRCUIT  
BOARDS  
In-system updates to the flash memory requires  
special consideration of the VPP power supply trace  
by the printed circuit board designer. Since the VPP  
pin supplies the current for programming and  
erasing, it should have similar trace widths and  
layout considerations as given to the VCC power  
supply trace. Adequate VPP supply traces, and  
decoupling capacitors placed adjacent to the  
component, will decrease spikes and overshoots.  
A system designer must guard against spurious  
writes when VCC voltages are above VLKO and VPP  
is active. Since both WE# and CE# must be low for  
a command write, driving either signal to VIH will  
inhibit writes to the device. Additionally, alteration of  
memory can only occur after successful completion  
of a two-step command sequences. The device is  
also disabled until RP# is brought to VIH, regardless  
25  
ADVANCE INFORMATION  
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