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DT28F320J5-120 参数 Datasheet PDF下载

DT28F320J5-120图片预览
型号: DT28F320J5-120
PDF下载: 下载PDF文件 查看货源
内容描述: 5伏英特尔的StrataFlash ?内存 [5 Volt Intel StrataFlash® Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 51 页 / 620 K
品牌: INTEL [ INTEL ]
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28F320J5 and 28F640J5  
4.6  
Block Erase Command  
Erase is executed one block at a time and initiated by a two-cycle command. A block erase setup is  
first written, followed by an block erase confirm. This command sequence requires an appropriate  
address within the block to be erased (erase changes all block data to FFH). Block preconditioning,  
erase, and verify are handled internally by the WSM (invisible to the system). After the two-cycle  
block erase sequence is written, the device automatically outputs status register data when read (see  
Figure 8, “Block Erase Flowchart” on page 34). The CPU can detect block erase completion by  
analyzing the output of the STS pin or status register bit SR.7. Toggle OE#, CE0, CE1, or CE2 to  
update the status register.  
When the block erase is complete, status register bit SR.5 should be checked. If a block erase error  
is detected, the status register should be cleared before system software attempts corrective actions.  
The CUI remains in read status register mode until a new command is issued.  
This two-step command sequence of set-up followed by execution ensures that block contents are  
not accidentally erased. An invalid Block Erase command sequence will result in both status  
register bits SR.4 and SR.5 being set to “1.” Also, reliable block erasure can only occur when VCC  
is valid and VPEN = VPENH. If block erase is attempted while VPEN VPENLK, SR.3 and SR.5 will  
be set to “1.” Successful block erase requires that the corresponding block lock-bit be cleared or, if  
set, that RP# = VHH. If block erase is attempted when the corresponding block lock-bit is set and  
RP# = VIH, SR.1 and SR.5 will be set to “1.” Block erase operations with VIH < RP# < VHH  
produce spurious results and should not be attempted.  
4.7  
Block Erase Suspend Command  
The Block Erase Suspend command allows block-erase interruption to read or program data in  
another block of memory. Once the block erase process starts, writing the Block Erase Suspend  
command requests that the WSM suspend the block erase sequence at a predetermined point in the  
algorithm. The device outputs status register data when read after the Block Erase Suspend  
command is written. Polling status register bit SR.7 then SR.6 can determine when the block erase  
operation has been suspended (both will be set to “1”). In default mode, STS will also transition to  
VOH. Specification tWHRH defines the block erase suspend latency.  
At this point, a Read Array command can be written to read data from blocks other than that which  
is suspended. A program command sequence can also be issued during erase suspend to program  
data in other blocks. During a program operation with block erase suspended, status register bit  
SR.7 will return to “0” and the STS output (in default mode) will transition to VOL  
.
The only other valid commands while block erase is suspended are Read Query, Read Status  
Register, Clear Status Register, Configure, and Block Erase Resume. After a Block Erase Resume  
command is written to the flash memory, the WSM will continue the block erase process. Status  
register bits SR.6 and SR.7 will automatically clear and STS (in default mode) will return to VOL  
.
After the Erase Resume command is written, the device automatically outputs status register data  
when read (see Figure 9, “Block Erase Suspend/Resume Flowchart” on page 35). VPEN must  
remain at VPENH (the same VPEN level used for block erase) while block erase is suspended. RP#  
must also remain at VIH or VHH (the same RP# level used for block erase). Block erase cannot  
resume until program operations initiated during block erase suspend have completed.  
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Datasheet  
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