欢迎访问ic37.com |
会员登录 免费注册
发布采购

DT28F320J5-120 参数 Datasheet PDF下载

DT28F320J5-120图片预览
型号: DT28F320J5-120
PDF下载: 下载PDF文件 查看货源
内容描述: 5伏英特尔的StrataFlash ?内存 [5 Volt Intel StrataFlash® Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 51 页 / 620 K
品牌: INTEL [ INTEL ]
 浏览型号DT28F320J5-120的Datasheet PDF文件第18页浏览型号DT28F320J5-120的Datasheet PDF文件第19页浏览型号DT28F320J5-120的Datasheet PDF文件第20页浏览型号DT28F320J5-120的Datasheet PDF文件第21页浏览型号DT28F320J5-120的Datasheet PDF文件第23页浏览型号DT28F320J5-120的Datasheet PDF文件第24页浏览型号DT28F320J5-120的Datasheet PDF文件第25页浏览型号DT28F320J5-120的Datasheet PDF文件第26页  
28F320J5 and 28F640J5  
4.2.5  
System Interface Information  
The following device information can optimize system interface software.  
Table 10. System Interface Information  
Hex  
Code  
Offset Length  
Description  
Add.  
Value  
V
V
V
V
logic supply minimum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 BCD volts  
CC  
1Bh  
1Ch  
1Dh  
1Eh  
1
1
1
1
1B:  
--45  
--55  
--00  
--00  
4.5 V  
logic supply maximum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 BCD volts  
CC  
1C:  
1D:  
1E:  
5.5 V  
0.0 V  
0.0 V  
[programming] supply minimum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 HEX volts  
PP  
[programming] supply maximum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 HEX volts  
PP  
1Fh  
20h  
21h  
22h  
1
1
1
1
“n” such that typical single word program time-out = 2n µs  
“n” such that typical max. buffer write time-out = 2n µs  
“n” such that typical block erase time-out = 2n ms  
“n” such that typical full chip erase time-out = 2n ms  
1F:  
20:  
21:  
22:  
--07  
--07  
--0A  
--00  
128 µs  
128 µs  
1 s  
NA  
“n” such that maximum word program time-out = 2n times  
typical  
23h  
1
23:  
--04  
2 ms  
24h  
25h  
26h  
1
1
1
“n” such that maximum buffer write time-out = 2n times typical  
“n” such that maximum block erase time-out = 2n times typical  
“n” such that maximum chip erase time-out = 2n times typical  
24:  
25:  
26:  
--04  
--04  
--00  
2 ms  
16 s  
NA  
22  
Datasheet  
 复制成功!