Electrical, Power, and Thermal
4.3
DDR2 DRAM Interface Electrical Specifications
Table 4-7 contains the electrical DC parameters for the AMB DDR2
Table 4-7.
Recommended Operating Conditions for DRAM Interface
Symbol
Parameter
Supply voltage
Min
Nom
Max
Unit
V
V
V
1.7
1.8
1.9
V
DD
REF
TT
Input reference voltage
Termination voltage
0.49 * V
0.50 * V
0.51 * V
DD
mV
mV
DD
DD
V
– 40
V
V
+ 40
REF
REF
REF
V
Single Ended Signals
V
V
V
V
V
V
Input voltage
0
-
-
-
-
-
-
IN
DD
DC HIGH-level input voltage
DC LOW-level input voltage
AC HIGH-level input voltage
AC LOW-level input voltage
V
V
V
/ 2 + 100
-300
V
+ 300
DD
mV
mV
mV
mV
mV
IH(dc)
IL(dc)
IH(ac)
IL(ac)
OH
DD
DD
DD
V
/ 2 - 100
DD
/ 2 + 200
-
-
V
/ 2 – 200
-
DD
Minimum Required Output Pull-up
under AC Test Load
/ 2 + 575
V
V
Maximum Required Output Pull-down
under AC Test Load
-
-
-
V
/ 2 - 575
-
mV
V
OL
DD
Output Timing Measurement
Reference Level
0.5*V
OTR
DD
I
I
Output minimum source dc current
Output minimum sink dc current
-13.8
13.8
-
-
-
-
mA
mA
OH(dc)
OL(dc)
Differential Signals
V
V
V
DC differential input voltage
AC differential input voltage
0.2
0.4
-
-
-
-
-
V
V
V
ID(dc)
ID(ac)
IX(ac)
AC differential input crossing voltage
0.5 * VDD -
0.100
0.5 * VDD +
0.100
Vr
Input timing measurement reference
level
V
IX(ac)
V
AC differential output crossing
voltage
0.5 * VDD -
0.100
-
0.5 * VDD +
0.100
V
OX(ac)
V
Output slew-rate requirement
Input leakage current (HIGH)
Input leakage current (LOW)
Input/Output Capacitance
Output Impedance
2.2
-
-
-
-
-
-
-
3.2
10
V/ns
µA
OUT (slew)
Iih
Iil
-
10
µA
C
R
2.0
13
-
2.5
20
pF
IO
OUT
C
Ohms
o
T
Package surface (case) temperature
for AMB
110
C
Notes:
1.
2.
3.
4.
5.
Values highlighted in ‘Red’ are for reference (that is, placeholder value)
No V
OUT (slew)
pin on AMB
REF
V
covers all other outputs slew rate including clock
Input voltage for all pins is limited to a maximum of 2.3 V.
VDD/2 = 1.7/2 = 850 mV; V
VOUT between VDD/2 and VDD/2 - 275 mV.
= 575 mV. (V
- VDD/2)/I
must be less than 20 Ohm for values of
OH
OUT
OUT
6.
7.
VDD/2 = 1.7/2 = 850 mV; V
between 0V and 275 mV.
IO
= 275 mV. V
/I
must be less than 20 Ohm for values of VOUT
OUT
OUT OH
C
is the Input/Output capacitance for DQ/DQS, and Output capacitance for CMD/ADDR/CK.
Intel® 6400/6402 Advanced Memory Buffer Datasheet
45
INTEL [ INTEL ]
