Electrical, Power, and Thermal
Table 4-4.
Power Values for x4 DIMMs (Sheet 3 of 3)
533 MHz
Max
667 MHz
Power Thermal
Thermal
Design
Max
Current
Symbol
Idd_EI
(for AMB
spec, Not in
SPD)
Conditions
Electrical Idle
DRAM Idle (0 BW)
Primary channel Disabled
Secondary channel Disabled
Units
Supply
Design
Current
@1.5 V
@1.8 V
@3.3 V
2.0
0.2
2.5
0.2
A
A
A
CKE low. Command and
Address lines Floated
DRAM clock active, ODT and
CKE driven low
Idd_EI Total Power
W
IDD_S3
S3 Current
VDD = 1.9V
VDD
(1.8V)
75
75
mA
VCC = 0V
VTT = 0V
Across process variations
Across the operating TCASE
temp range
DIMM types, R/C A, B, C, D, E,
H & J
Notes:
1.
2.
3.
4.
Vdd : Thermal Design = 1.845 V (+2.5%) ; Max Current = 1.900 V (+5.5%)
Vcc : Thermal Design = 1.530 V (+2%) ; Max Current = 1.575 V (+5%)
Includes all DIMM DRAM organizations (SRx4, DRx4, SRx8, DRx8) and Raw Cards (A, B, C, D, E, H, J)
For x8, measured with DRx8 raw card B with 39 ohm termination for command, address, and clocks, and
47 ohm termination for CS and CKE
5.
6.
7.
For x4, measured with DRx4 raw card E with parallel 33 ohm termination for command, address, and 39
ohm termination for CS, CKE and clocks
Cards using smaller termination resistors will have higher powers. for example, x4 cards parallel 22 ohm
termination for command and address could add as much as 0.4W to the power for all states.
Total DIMM current during S3 includes AMB IDD_S3 and self-refresh current of all DRAM devices.
Intel® 6400/6402 Advanced Memory Buffer Datasheet
43
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