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6400 参数 Datasheet PDF下载

6400图片预览
型号: 6400
PDF下载: 下载PDF文件 查看货源
内容描述: 高级内存缓冲器 [Advanced Memory Buffer]
分类和应用:
文件页数/大小: 250 页 / 3863 K
品牌: INTEL [ INTEL ]
 浏览型号6400的Datasheet PDF文件第45页浏览型号6400的Datasheet PDF文件第46页浏览型号6400的Datasheet PDF文件第47页浏览型号6400的Datasheet PDF文件第48页浏览型号6400的Datasheet PDF文件第50页浏览型号6400的Datasheet PDF文件第51页浏览型号6400的Datasheet PDF文件第52页浏览型号6400的Datasheet PDF文件第53页  
Electrical, Power, and Thermal  
4.4.9  
Write Preamble Duration  
The write preamble duration is the measurement from the point when DQS and DQS  
start to be driven, to the crossing point of DQS and DQS. Typically, to determine when  
DQS and DQS are starting to be driven, timing measurements are made at 0.5xVCC +/  
- 50 mV, and 0.5xVCC +/- 100 mV, and then the measurements are linearly  
extrapolated back to 0.5xVCC.  
Figure 4-8. Write Preamble Duration Timing Diagram  
tWPREamb  
DQS  
(AMB)  
0.5xVCC  
4.4.10  
Write Postamble Duration  
The write postamble duration is the measurement from the crossing point of DQS and  
DQS, to the point where DQS and DQS start to go into a high impedance state.  
Typically, to determine when DQS and DQS are starting to go into a high impedance  
state, for DQS, timing measurements are made at Vlow + 50 mV, and Vlow + 100 mV,  
and then the measurements are linearly extrapolated back to Vlow. For DQS, timing  
measurements are made at Vhigh - 50 mV, and Vhigh - 100 mV, and then the  
measurements are extrapolated back to Vhigh.  
Figure 4-9. Write Postamble Duration Timing Diagram  
tW P S T a m b  
0 .5 x V C C  
D Q S  
(A M B )  
Intel® 6400/6402 Advanced Memory Buffer Datasheet  
49  
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