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6400 参数 Datasheet PDF下载

6400图片预览
型号: 6400
PDF下载: 下载PDF文件 查看货源
内容描述: 高级内存缓冲器 [Advanced Memory Buffer]
分类和应用:
文件页数/大小: 250 页 / 3863 K
品牌: INTEL [ INTEL ]
 浏览型号6400的Datasheet PDF文件第35页浏览型号6400的Datasheet PDF文件第36页浏览型号6400的Datasheet PDF文件第37页浏览型号6400的Datasheet PDF文件第38页浏览型号6400的Datasheet PDF文件第40页浏览型号6400的Datasheet PDF文件第41页浏览型号6400的Datasheet PDF文件第42页浏览型号6400的Datasheet PDF文件第43页  
Electrical, Power, and Thermal  
Table 4-3.  
Power Values for x8 DIMMS (Sheet 2 of 3)  
533 MHz  
667 MHz  
Power  
Supply  
Thermal  
Design  
Max  
Current  
Thermal  
Design  
Max  
Current  
Symbol  
Conditions  
Units  
Notes  
Idd_TDP_1 Total Power  
5.8  
6.4  
W
A
Idd_Active_1  
Active Power  
L0 state.  
@1.5 V  
@1.8 V  
@3.3 V  
3.1  
1.2  
3.4  
1.3  
3.6  
1.2  
3.9  
1.3  
A
50% DRAM BW, 67%  
read, 33% write.  
A
Primary and Secondary  
channels enabled.  
DRAM clock active, CKE  
high.  
Idd_Active_1 Total Power  
6.4  
2.9  
0.6  
7.1  
3.3  
0.6  
W
A
Idd_Active_2  
Active Power, data pass @1.5 V  
through  
3.2  
0.7  
3.7  
0.7  
@1.8 V  
A
L0 state.  
50% DRAM BW to  
@3.3 V  
A
downstream DIMM,  
67% read, 33% write.  
Primary and Secondary  
channels enabled  
CKE high. Command  
and address lines  
stable.  
DRAM clock active.  
Idd_Active_2 Total Power  
5.0  
5.6  
W
A
Idd_Training  
Training  
@1.5 V  
@1.8 V  
@3.3 V  
3.5  
0.7  
4.0  
0.7  
(for AMB spec,  
Not in SPD)  
Primary and Secondary  
channels enabled.  
A
100% toggle on all  
channel lanes  
A
DRAMs idle. 0 BW.  
CKE high, Command  
and address lines  
stable.  
DRAM clock active.  
Idd_Training Total Power  
W
A
Idd_IBIST  
IBIST  
@1.5 V  
@1.8 V  
@3.3 V  
3.8  
0.7  
4.5  
0.7  
(for AMB spec,  
Not in SPD)  
Over all IBIST modes  
DRAM Idle (0 BW)  
A
A
Primary channel  
Enabled  
Secondary channel  
Enabled  
CKE high. Command  
and Address lines stable  
DRAM clock active  
Idd_IBIST Total Power  
W
Intel® 6400/6402 Advanced Memory Buffer Datasheet  
39  
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