Functional Description
512-Mb technology
64-M cells x8 data bits/cell
1K columns
4 banks
16K rows
Each component has a 1-KB page.
One DIMM has 8 components resulting in an 8-KB page.
The capacity of one rank is 512 MB.
32-M cells x16 data bits/cell
1-K columns
4 banks
8-K rows
Each component has a 2-KB page.
One DIMM has 4 components resulting in an 8-KB page.
The capacity of one rank is 256 MB.
1-Gb technology
128-M cells x8 data bits/cell
1-K columns
8 banks
16-K rows
Each component has a 1-KB page.
One DIMM has 8 components resulting in an 8-KB page.
The capacity of one rank is 1 GB.
64-M cells x16 data bits/cell
1-K columns
8 banks
8-K rows
Each component has a 2-KB page.
One DIMM has 4 components resulting in an 8-KB page.
The capacity of one rank is 512MB.
The DRAM sub-system supports single or dual channels, 64b wide per channel. A
maximum of 4 ranks can be populated (2 Double Sided DIMMs) per channel. Mixed
mode DDR DS-DIMMs (x8 and x16 on the same DIMM) are not supported (not
validated).
By using 1Gb technology, the largest memory capacity is 8 GB (16K rows * 1K
columns * 1 cell/(row * column) * 8 b/cell * 8 banks/device * 8 devices/rank * 4
ranks/channel * 2 channel *1M/(K*K) * 1G/1024M * 1B/8b = 8 GB). Utilizing 8GB of
memory is only possible in Interleaved mode with all ranks populated at maximum
capacity.
By using 256Mb technology, the smallest memory capacity is 128 MB (8K rows * 512
columns * 1 cell/(row * column) * 16b/cell * 4 banks/device * 4 devices/rank * 1
rank * 1M/1024K * 1B/8b = 128 MB).
Datasheet
287
INTEL [ INTEL ]
